Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Han-Lin Zhao"'
Autor:
Han-Lin Zhao, Gergely Tarsoly, Fei Shan, Xiao-Lin Wang, Jae-Yun Lee, Yong Jin Jeong, Sung-Jin Kim
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract This paper examined the effects of no treatment versus plasma treatment, and femtosecond laser irradiation as pre-annealing processes on indium zinc oxide (IZO) films and annealing at high temperatures. The plasma pre-annealed multilayer sta
Externí odkaz:
https://doaj.org/article/066f5f0f03894bb48cfe0cc047b7ce3a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 379-386 (2022)
In this work, the effect of a UV/ozone source composed of two monochromatic wavelengths of 184 nm and 254 nm irradiated upon the indium oxide film (In2O3) at the different irradiation times together with annealing at high temperature is explored. The
Externí odkaz:
https://doaj.org/article/0af5f721761e4a4a9076246ed1f56d18
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 642-648 (2022)
The excellent chemical stability and hydrophobicity of Polytetrafluoroethylene (PTFE) polymer lead to its applicability in high-performance flexible electronic appliances. Though the detailed investigation for PTFE passivated metal oxide thin-film tr
Externí odkaz:
https://doaj.org/article/4907425b2c9f4bfa9914f84124352d3d
Publikováno v:
Jisuanji kexue, Vol 48, Iss 12, Pp 36-42 (2021)
The "Songshan" supercomputer system is a new generation of heterogeneous supercomputer cluster independently developed by China.The CPU and DCU accelerators it carries are all independently developed by my country.In order to expand the scientific co
Externí odkaz:
https://doaj.org/article/4cb06a590cf84a88995ce2ab8a93fb61
Publikováno v:
IEEE Transactions on Electron Devices. 69:4277-4282
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ff9ccf3006da8d48b24c637424b30c
https://doi.org/10.1109/ted.2022.3179672
https://doi.org/10.1109/ted.2022.3179672
Autor:
Fei Shan, Suchang Yoo, Jae-Yun Lee, Han-Lin Zhao, Xiao-Lin Wang, Seong Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
Publikováno v:
Journal of Electrical Engineering & Technology. 18:509-514
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf90a9c2c5a88de1afe448df279c1f9
https://doi.org/10.1007/s42835-022-01169-1
https://doi.org/10.1007/s42835-022-01169-1
Autor:
Xiao-Lin Wang, Fei Shan, Han-Lin Zhao, Jae-Yun Lee, Suchang Yoo, Heung Gyoon Ryu, Seungkeun Choi, Tukhtaev Anvar, Sung-Jin Kim
Publikováno v:
Electronic Materials Letters. 18:423-430
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afcc434d0c562488cfdabb22862c1e64
https://doi.org/10.1007/s13391-022-00353-9
https://doi.org/10.1007/s13391-022-00353-9
Autor:
Jae-Yun Lee, Suchang Yoo, Han-Lin Zhao, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
Publikováno v:
Korean Journal of Metals and Materials. 60:307-314
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bed3518061964f4076e61128af9acdd
https://doi.org/10.3365/kjmm.2022.60.4.307
https://doi.org/10.3365/kjmm.2022.60.4.307
Publikováno v:
Journal of Materials Chemistry C. 10:9114-9123
A fluoroacrylate-incorporated polytetrafluoroethylene as a new material for passivation layers of a-IGZO TFTs is a potential technology to enhance stability by reducing the adsorption behavior of H2O and O2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b1843f228d1b9ba72521f6b8f8b69ff
https://doi.org/10.1039/d2tc01053d
https://doi.org/10.1039/d2tc01053d
Publikováno v:
Electronic Materials Letters. 17:451-458
Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process on silicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical properties an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf6a4eebc1634015191ddb3609c4d5bd
https://doi.org/10.1007/s13391-021-00296-7
https://doi.org/10.1007/s13391-021-00296-7