Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Han-Kyoung Ko"'
Publikováno v:
Japanese Journal of Applied Physics. 45:6993-6995
The initial performance and reliability characteristics of metal–oxide–semiconductor (MOS) capacitors with HfO2 films deposited with H2O or D2O as an oxidant and Hf[N(C2H5)(CH3)]4 as a metal precursor using atomic layer deposition (ALD) were inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8a607c8f394729c9663c6a687b6531
https://doi.org/10.1143/jjap.45.6993
https://doi.org/10.1143/jjap.45.6993
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
Oxide degradation and breakdown have received increasing attention since they cause failure in advanced ULSI devices and, therefore, may impede the down scaling trend of oxide thickness and MOSFET size (Han et al., 1997). The electrical and reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24fb13bec1847cf199240cf0c904f697
https://doi.org/10.1109/imnc.2005.203754
https://doi.org/10.1109/imnc.2005.203754
Autor:
Song Yi Kim, D. J. Jung, Han Kyoung Ko, E.S. Lee, Young Ki Hong, Won Woong Jung, Hongsik Jeong, Seung-Kuk Kang, Heesan Kim, Ju-Young Jung, Jai-Hyun Kim, Young-Min Kang, Sung-Yung Lee, Do Yeon Choi, Jin Young Kang, Hyunho Kim
Publikováno v:
Japanese Journal of Applied Physics. 48:04C066
During the device lifetime tests such as high temperature operational life (HTOL) and high temperature storage (HTS) tests, a physical de-lamination of the IrO2 layer in vertical conjunction to pulsed plate-line, so-called here additional top electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e2c615c44b51b8f9cdfdbacda15205
https://doi.org/10.1143/jjap.48.04c066
https://doi.org/10.1143/jjap.48.04c066
Autor:
Duck-Kyun Choi, Min-Ho Park, Cheol-Woong Yang, Jinho Ahn, Jungho Park, Taeho Lee, Han-Kyoung Ko, In-Sung Park
Publikováno v:
Electrochemical and Solid-State Letters. 10:H63
The work function shift mechanism of the bilayer metal-gate electrode system has been investigated. An abrupt variation of the metal work function of Ru/Ti/SiO2 was observed at a bottom layer thinner than 7 nm with the tunable range of nearly 1.3 eV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f538b2b1ce385b0e6e754d82b6a99058
https://doi.org/10.1149/1.2402980
https://doi.org/10.1149/1.2402980
Publikováno v:
2005 Digest of Papers Microprocesses & Nanotechnology; 2005, p94-95, 2p