Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Han-Jin Lim"'
Autor:
Zhe Wang, Hari P. Nair, Gabriela C. Correa, Jaewoo Jeong, Kiyoung Lee, Eun Sun Kim, Ariel Seidner H., Chang Seung Lee, Han Jin Lim, David A. Muller, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 086101-086101-10 (2018)
We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve fu
Externí odkaz:
https://doaj.org/article/521aa86ff1f74f23bfac285a9781b1b0
Autor:
Young-Nam Kwon, Na Byunghoon, Jungmin Park, Myoungho Jeong, Han-jin Lim, Euijoon Yoon, Beom-jong Kim
Publikováno v:
Ferroelectrics. 571:76-84
Epitaxial SrTiO 3 thin films were grown by molecular beam epitaxy (MBE) using an oxygen plasma source. SrO and TiO2 layers were alternately deposited on 0.5 wt% (001) Nb doped SrTiO3 substrates who...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af388a4e54015856108fe7839e538970
https://doi.org/10.1080/00150193.2020.1853741
https://doi.org/10.1080/00150193.2020.1853741
Autor:
Se Eun Kim, Ju Young Sung, Jae Deock Jeon, Seo Young Jang, Hye Min Lee, Sang Mo Moon, Jun Goo Kang, Han Jin Lim, Hyung‐Suk Jung, Sang Woon Lee
Publikováno v:
Advanced Materials Technologies. :2200878
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0ddf6bbd15d760ee2bbe93ba9c81e7
https://doi.org/10.1002/admt.202200878
https://doi.org/10.1002/admt.202200878
Autor:
Seunghyup Lee, Younsoo Kim, Dokyoung Kim, Hongseon Song, Kijung Yong, Hyung-Suk Jung, Han-jin Lim
Publikováno v:
Thin Solid Films. 675:153-159
In this work, we have studied the atomic layer deposition (ALD) of ZrO2 under various O3 dosing conditions and systematically investigated the interfacial properties of ZrO2/TiN during ALD fabrication using the CpZr(N(CH3)2)3 and O3 reactant combinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54df2f4866746178d078486888abdc86
https://doi.org/10.1016/j.tsf.2019.02.040
https://doi.org/10.1016/j.tsf.2019.02.040
Autor:
Im Dongmo, Keun-Yeong Cho, Hyun-Chul Kim, Jingyun Kim, Dae-Hoon Kim, Chong Kwang Chang, Haemin Lim, Doo-Won Kwon, Jung-Chak Ahn, Ho-Kyu Kang, Heesung Shim, Seung Sik Kim, Ju-young Kim, Kim Taehyoung, Hyeongsun Hong, Han-jin Lim, In-Gyu Baek, Kyoung-Min Koh, Kyu-Pil Lee, Jungchan Kyoung, Joo-sung Moon, Jiyoon Kim, Jae-Kyu Lee, Seo Minwoong, Minho Jang, Jiyoun Song, Tae-Hoon Kim, Jinyong Choi
Publikováno v:
ISSCC
As the automotive and AI industries are expanding rapidly, global-shutter (GS) image sensors are playing a more significant role in the perception system. More specifically, GS image sensors are required in various fields involving IR, including the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448d99ab1e69f61a9e5e9671344099a0
https://doi.org/10.1109/isscc19947.2020.9063092
https://doi.org/10.1109/isscc19947.2020.9063092
Autor:
Youngsun Oh, Taehun Lee, Dongsuk Cho, Haeyong Park, Joo Hyoung Kim, Han-jin Lim, Hyeongsun Hong, Soo-jin Hong, Changkyu Lee, Yi-tae Kim, Chongkwang Chang, Doo-Won Kwon, Seungjoo Nah, Jung-Chak Ahn, Jingyun Kim, Ho-Kyu Kang, Kyu-Pil Lee, Sangill Jung, Hyun-Chul Kim, In-sung Joe, Jae-Kyu Lee, Jong-Eun Park
Publikováno v:
ISSCC
As the smart mobile device market continues to grow and the number of cameras per device rapidly increases, demand for CMOS image sensors (CIS) also increases. Two major trends in mobile device cameras are: (1) adopting smaller pixels that enable gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f551c53edb0eedee8e34a33f48c12cc1
https://doi.org/10.1109/isscc19947.2020.9062924
https://doi.org/10.1109/isscc19947.2020.9062924
Publikováno v:
Solid-State Electronics. 185:108128
Dipole layers can be formed at epitaxial interfaces of perovskite oxides by intentionally inserting charged atomic layers. Perovskite oxides such as SrTiO3 (STO) can provide dielectrics with very high dielectric constants, but their bandgaps are so s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dff44b8b201034ad6f30d759f8ddbe5
https://doi.org/10.1016/j.sse.2021.108128
https://doi.org/10.1016/j.sse.2021.108128
Autor:
Im D.-H., Woo Hyun Nam, Jeong Yong Lee, Sang Yun Kim, Lee K.-S., Kwang Wuk Park, Yong In Kim, Myoungho Jeong, Jong Min Yuk, Im K.-V., Han-jin Lim, Sungkyu Kim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:3370-3374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9420d99ba331d858f23850d2ec562a
https://doi.org/10.1166/jnn.2017.14021
https://doi.org/10.1166/jnn.2017.14021
Autor:
Younsoo Kim, Hyungtak Seo, Jaehyung Choi, Jaewan Chang, Sang Yeon Lee, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Current Applied Physics. 17:267-271
We report the Schottky barrier height (SBH) at metal–insulator interfaces in Pt/ZrO 2 –Al 2 O 3 –ZrO 2 (ZAZ)/TiN dynamic random access memory capacitors by analyzing the photoconductivity yield and internal photoemission (IPE) yield using IPE s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba0b5d59aa9330b43b4962cdf17db39
https://doi.org/10.1016/j.cap.2016.12.004
https://doi.org/10.1016/j.cap.2016.12.004
Autor:
Woochool Jang, Jaewan Chang, Heeyoung Jeon, Hyungtak Seo, Hyoseok Song, Changhee Shin, Seokyoon Shin, Joo Hyun Park, Younsoo Kim, Jae Hyoung Choi, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Thin Solid Films. 619:317-322
In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a890e970c9b9152c1d1018638f0f53a
https://doi.org/10.1016/j.tsf.2016.10.044
https://doi.org/10.1016/j.tsf.2016.10.044