Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Han Wook Hwang"'
Autor:
Jung Chul Kim, I. Sak Lee, Hyung Tae Kim, Jong Bin An, Jae Sung Kim, Juhn Suk Yoo, Han Wook Hwang, Hyun Chul Choi, Yong Min Ha, Hyun Jae Kim
Publikováno v:
Journal of Information Display, Vol 24, Iss 4, Pp 283-298 (2023)
This paper proposes a novel pixel circuit and driving scheme that adopts low-temperature polycrystalline silicon and oxide thin-film transistors (LTPO TFTs) for mobile devices using active-matrix organic light-emitting diode (AMOLED) displays. The pr
Externí odkaz:
https://doaj.org/article/9a7f1bc9cf4648f9b82350ad27bb461d
Publikováno v:
Journal of Information Display, Vol 22, Iss 4, Pp 275-284 (2021)
The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electri
Externí odkaz:
https://doaj.org/article/374320c22f0b4041813f16b36849e152
Autor:
Seung Hee Kang, I. Sak Lee, Kyungmoon Kwak, Kyeong Take Min, Nack Bong Choi, Han Wook Hwang, Hyun Chul Choi, Hyun Jae Kim
Publikováno v:
ACS Applied Electronic Materials. 4:2372-2379
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f36dd5431e3a29c5a010ba27623d79e
https://doi.org/10.1021/acsaelm.2c00196
https://doi.org/10.1021/acsaelm.2c00196
Publikováno v:
Journal of Information Display, Vol 22, Iss 4, Pp 275-284 (2021)
The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e743df62fbf0bf2bdf05776c50e75dd6
https://doaj.org/article/374320c22f0b4041813f16b36849e152
https://doaj.org/article/374320c22f0b4041813f16b36849e152
Publikováno v:
IEEE Electron Device Letters. 40:1108-1111
Recoverable residual image characteristics for n- and p-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT)-based organic light-emitting diode (OLED) displays using polyimide substrates were investigated. Unlike OLED displa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11909d611a085ff31e6ed2a7a9c618d
https://doi.org/10.1109/led.2019.2914142
https://doi.org/10.1109/led.2019.2914142
Publikováno v:
SID Symposium Digest of Technical Papers. 50:105-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4dc8daa47bfb14d00a19c0d8851544
https://doi.org/10.1002/sdtp.12866
https://doi.org/10.1002/sdtp.12866
Publikováno v:
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
A novel driving technology is introduced and adopted to low-temperature poly-crystalline silicon and oxide (LTPO) active-matrix organic light-emitting diode (AMOLED) display for flicker improvement at low frequency operation. The proposed LTPO pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e62d673ddc140da3b1ca4c03be52d24d
https://doi.org/10.23919/am-fpd52126.2021.9499207
https://doi.org/10.23919/am-fpd52126.2021.9499207
Autor:
Han Wook Hwang, Jung Min Lee, Byeong Kwon Ju, Yong Min Ha, Soon Kwang Hong, Juhn Suk Yoo, Chang Heon Kang
Publikováno v:
Organic Electronics. 99:106328
A typical organic light-emitting diode (OLED) display has common organic layers between adjacent pixels, which ensure ease of manufacturing process and efficiency in operation. The p-doped hole transport layer (p-HTL) has low electrical resistivity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64128270eb7df856d28578c2caf3f552
https://doi.org/10.1016/j.orgel.2021.106328
https://doi.org/10.1016/j.orgel.2021.106328
Autor:
Jun Suk Yoo, Han Wook Hwang, Sujin Jung, Jung Chul Kim, Yong Min Ha, Seonghwan Hong, Hyun Jae Kim, Mihee Sin
Publikováno v:
Proceedings of the International Display Workshops. :505
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adafc07158c4981da6a02b1f03ee6947
https://doi.org/10.36463/idw.2019.0505
https://doi.org/10.36463/idw.2019.0505
Publikováno v:
Japanese Journal of Applied Physics. 42:5455-5460
We propose novel polycrystalline silicon thin-film transistors (poly-Si TFTs) to reduce leakage current effectively by employing the offset region near the drain and extended gate electrodes. The active layer has been prepared by two-step-annealing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0adca9a9e3bfd31142d6f41e4f5bd369
https://doi.org/10.1143/jjap.42.5455
https://doi.org/10.1143/jjap.42.5455