Výsledky vyhledávání - "Han Seob Cha"

Co-Induced Low-Temperature Silicidation of Ni Germanosilicide Using NiPt Alloy and the Effect of Ge Ratio on Thermal Stability

Autor: Jang-Gn Yun, Soon-Young Oh, Yong-Goo Kim, Yong-Jin Kim, Heui-Seung Lee, Han-Seob Cha, Ui-Sik Kim, Hee-Hwan Ji, Hi-Deok Lee, Sung-Hyung Park, Bin-Feng Huang, Sang-Bum Hu, Dae-Byung Kim, Jeong-Gun Lee

Publikováno v: IEEE Transactions On Nanotechnology. 6:485-491

In this paper, novel Ni germanosilicide technology using NiPt alloy and Co overlayer has been proposed. Using the Co overlayer after NiPt deposition on Si1-xGex, the formation temperature of low resistive Ni germanosilicide is lowered with high therm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10b16acd0c9d15f4ab8fa6febef2f673
https://doi.org/10.1109/tnano.2007.897083

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Thermal Stability Improvement of Ni–Germano silicide Utilizing Ni–Pd Alloy for Nanoscale CMOS Technology

Autor: Han-Seob Cha, Ying-Ying Zhang, J.-S. Wang, Y.-C. Kim, Soon-Young Oh, Jang-Gn Yun, Zhun Zhong, Soon-Yen Jung, Won-Jae Lee, Hee-Hwan Ji, Yong-Goo Kim, Hi-Deok Lee

Publikováno v: IEEE Transactions On Nanotechnology. 6:431-437

In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits lo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74feb309d29bb293299868b492f69908
https://doi.org/10.1109/tnano.2007.897084

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Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Autor: Won-Jae Lee, Hi Deok Lee, Agchbayar Tuya, Han Seob Cha, Hee Hwan Ji, Kil Jin Han, Jang Gn Yun, Do−Woo Kim, Yong Jin Kim, Yeong−Cheul Kim, Jin Suk Wang, Yoo Jeong Cho, Soon Young Oh

Publikováno v: Japanese Journal of Applied Physics. 45:2980-2983

In this study, a highly thermal immune Ni–germanosilicide utilizing a 1%-nitrogen-doped nickel and a Co/TiN double capping layer is proposed for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs). It is shown tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a60d0b830eb5ddfb7bcef5ba68427478
https://doi.org/10.1143/jjap.45.2980

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Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology

Autor: Han Seob Cha, Hee Hwan Ji, Jang Gn Yun, Soon Young Oh, Bin Feng Huang, Yong Jin Kim, Sang Bum Huh, Hi Deok Lee, Jin Suk Wang, Ui Sik Kim

Publikováno v: IEICE Transactions on Electronics. :651-655

A novel NiSi technology with bi-layer Co/TiN structure as a capping layer is proposed for the highly thermal immune Ni Silicide technology. Much better thermal immunity of Ni Silicide was certified up to 700°C, 30 min post silicidation furnace annea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24430248e0fbbff87cd5198fc2a147eb
https://doi.org/10.1093/ietele/e88-c.4.651

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Void formation during silicidation and its influence on the thermal stability of cobalt silicide

Autor: Nam-Sik Kim, Nag-Kyun Sung, Han-Seob Cha, Ki-Seog Youn, Hyukhyun Ryu, Won Gyu Lee

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1171-1176

Void formation during silicidation and its influence on the thermal stability of CoSi2 on the poly-Si were investigated. Visible voids were found at the interface of CoSi2/poly-Si on the BF2 doped poly-Si but not on the boron doped one. Void formatio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3fadecfa9fa4a6cdeb76a4ef2c8669e2
https://doi.org/10.1116/1.1477199

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Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

Autor: Dae-Byung Kim, Sang-Bum Hu, Yong-Goo Kim, Jang-Gn Yun, Bin-Feng Huang, Heui-Seung Lee, Sungkweon Baek, Soon-Young Oh, Hee-Hwan Ji, Hi-Deok Lee, Hyunsang Hwang, Seong-Hyung Park, Jeong-Gun Lee, Ui-Sik Kim, Han-Seob Cha

Publikováno v: IEEE Electron Device Letters. 26:90-92

In this letter, hydrogen plasma immersion ion implantation (H PIII) with Ni-Co-TiN tri-layer is introduced for the first time to enhance the thermal stability of the Ni-silicide for nanoscale CMOS technology. The Ni-silicided poly-Si gate and source/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63626ac1d0d80048d49ff58df4bdf19c
https://doi.org/10.1109/led.2004.841863

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Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology

Autor: Won-Jae Lee, Soon-Young Oh, Hee-Hwan Ji, Hi-Deok Lee, Ying-Ying Zhang, Soon-Yen Jung, Han-Seob Cha, Jin-Suk Wang, Yeong-Cheol Kim, Zhun Zhong, Yong-Jin Kim

Publikováno v: 2006 International Workshop on Junction Technology.

In this paper, highly thermal stable nickel germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce93c8a454a1502c823165fcc9bdd4d8
https://doi.org/10.1109/iwjt.2006.1669477

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Highly thermal robust ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Autor: Jeong-Gun Lee, Heui-Seung Lee, Bin-Feng Huang, Jang-Gn Yun, Dae-Byung Kim, Sang-Bum Hu, Seong-Hyung Park, Han-Seob Cha, Soon-Young Oh, Hee-Hwan Ji, Hi-Deok Lee, Ui-Sik Kim

Publikováno v: 4th IEEE Conference on Nanotechnology, 2004..

Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The shee

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5af3386624e30df061be94f6b66a4798
https://doi.org/10.1109/nano.2004.1392238

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Ni/Co/Ni/TiN structure for highly thermal immune NiSi for CMOSFETs application

Autor: Hee-Hwan Ji, Ui-Sik Kim, Hi-Deok Lee, Yeong Cheol Kim, Won-Jae Lee, Yoo Jeong Cho, Jang-Gn Yun, Sang-Bum Heo, Jin-Suk Wang, Soon-Young Oh, Gil-Jin Han, Han-Seob Cha, Jeong-Gun Lee, Yong-Jin Kim, Agchbayar Tuya

Publikováno v: Extended Abstracts of the Fifth International Workshop on Junction Technology.

In this paper, a novel Ni/Co/Ni/TiN structure to improve the thermal stability of NiSi by forming highly thermal stable ternary phase, i.e., (Co/sub x/Ni/sub 1-x/)Si/sub 2/ especially at the top region of NiSi is proposed. The Ni/Co/Ni/TiN structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee53c4264de238af815efe499aa6537b
https://doi.org/10.1109/iwjt.2005.203891

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