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pro vyhledávání: '"Han Min Zhao"'
Publikováno v:
Semiconductor Science and Technology. 32:075009
This work reports a significant improvement in efficiency by optimizing the via-like n-electrode architecture design of a GaN-based thin-film LED grown on a 6-inch silicon substrate. The external quantum efficiency of the as-fabricated 1.1 mm × 1.1
Publikováno v:
Semiconductor Science & Technology; Jul2017, Vol. 32 Issue 7, p1-1, 1p