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pro vyhledávání: '"Han Kyung Goh"'
Autor:
Hee San Kim, Jae Hyun Kim, Song Yi Kim, Young Ki Hong, Jung-Hoon Park, Seung Kuk Kang, Woo Song Ahn, Hongsik Jeong, Han Kyung Goh, Won Woong Jung, Jin Young Kang, Do Yeon Choi, Sang Young Lee, Hyunho Kim, D. J. Jung, E.S. Lee, Ju-Young Jung, Young-Min Kang
Publikováno v:
Japanese Journal of Applied Physics. 47:2725-2727
Space charge concentration due to fatigue cycles was examined with an adequate modeling in order to expect read/write endurance of a 64 Mbit one-transistor and one-capacitor (1T1C) ferroelectric random access memory (FRAM). For monitoring the change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d594cb5177e131a3d86032926e1d6f
https://doi.org/10.1143/jjap.47.2725
https://doi.org/10.1143/jjap.47.2725
