Zobrazeno 1 - 10
of 635
pro vyhledávání: '"Han Junfeng"'
Autor:
Han, Junfeng, Mao, Pengcheng, Chen, Hailong, Yin, Jia-Xin, Wang, Maoyuan, Chen, Dongyun, Li, Yongkai, Zheng, Jingchuan, Zhang, Xu, Ma, Dashuai, Ma, Qiong, Yu, Zhi-Ming, Zhou, Jinjian, Liu, Cheng-Cheng, Wang, Yeliang, Jia, Shuang, Weng, Yuxiang, Hasan, M. Zahid, Xiao, Wende, Yao, Yugui
Publikováno v:
Science Bulletin (2023)
The bulk-boundary correspondence is a key concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the
Externí odkaz:
http://arxiv.org/abs/2302.03479
Publikováno v:
Journal of the Serbian Chemical Society, Vol 76, Iss 10, Pp 1395-1401 (2011)
The mechanism of the cycloaddition reaction between singlet state germylene silylene (H2Ge=Si:) and ethene was investigated by the CCSD(T)//MP2/6-31G
Externí odkaz:
https://doaj.org/article/7d967821f4e54e38af2c5af85d412df8
Autor:
Bai, Jiangyue, Jiang, Yujiu, Tan, Fan, Zhu, Peng, Li, Xiuxia, Xiong, Xiaolu, Wang, Zhiwei, Song, Tinglu, Xie, Bingteng, Yang, Yanbo, Han, Junfeng
Publikováno v:
In Bioelectrochemistry October 2024 159
The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crysta
Externí odkaz:
http://arxiv.org/abs/2203.06529
Autor:
Shen, Qinjing, Feng, Xinqi, Zhou, Yinjun, Lin, Penghui, Liu, Yuexin, Lai, Yuansen, Han, Junfeng, Liu, YuJiao, Wang, Yixuan, Zhu, Shuai, Li, Zhijing, Lai, Zhongping
Publikováno v:
In Quaternary Geochronology August 2024 83
Publikováno v:
MATEC Web of Conferences, Vol 25, p 03010 (2015)
With the development of computer science and technology, and increasingly intelligent industrial production, the application of big data in industry also advances rapidly, and the development of artificial intelligence in the aspect of fault diagnosi
Externí odkaz:
https://doaj.org/article/ffc00c8cdfb745b993b8680cf35ea78b
Autor:
Zhou, Yinjun, Han, Junfeng, Shen, Qinjing, Xu, Yantian, Tao, Yaling, Lin, Penghui, Lai, Yuansen, Wang, Yixuan, Lai, Zhongping
Publikováno v:
In Quaternary Geochronology June 2024 82
Autor:
Sun, Yan, Tang, Alvin, Wang, Ching-Hua, Zhao, Yanqing, Bai, Mengmeng, Xu, Shuting, Xu, Zheqi, Tang, Tao, Wang, Sheng, Qiu, Chenguang, Xu, Kang, Peng, Xubiao, Han, Junfeng, Pop, Eric, Chai, Yang, Guo, Yao
The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as
Externí odkaz:
http://arxiv.org/abs/2101.09487
Autor:
Shan, Yingyi, Han, Xiaodong, Yang, Chaoying, Li, Wen, Zhou, Guiyun, Han, Junfeng, Bao, Yuqian, Yu, Haoyong, Tu, Yinfang
Publikováno v:
In Surgery for Obesity and Related Diseases March 2024 20(3):237-243
Autor:
Cheng, Xiaoyong, Li, Zhijing, Liu, Yujiao, Jin, Zhongwu, Zhou, Yinjun, Wang, Yisen, Wang, Guiqiao, Han, Junfeng, Cao, Zhixian
Publikováno v:
In International Journal of Sediment Research November 2024