Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Han Jie Gao"'
Autor:
Jie Zhao, Kurban Awut, Woei Ji Song, Yi Zhi Zeng, Bin Zhang, Shao Feng Yu, Han Jie Gao, Gorge Cai
Publikováno v:
ECS Transactions. 60:721-725
High-k last and metal gate last process becomes the main stream in 20nm and beyond technology. In high-k last process, the thermal dummy gate oxide (DGO) must be removed before the growth of interfacial layer (IL). In conventional process, to avoid t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf4241c41388463f77eb1305fa7b4e1
https://doi.org/10.1149/06001.0721ecst
https://doi.org/10.1149/06001.0721ecst
Publikováno v:
ECS Transactions. 60:727-731
With the characteristic dimension scaling down of CMOS device, the gate leakage increases significantly and the device gets low reliability performance. Then EOT (Equivalent Oxide Thickness) should be decreased, and more performance would be gained w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55fc57b5e879a1e441fbf3e6e97c9eda
https://doi.org/10.1149/06001.0727ecst
https://doi.org/10.1149/06001.0727ecst
Autor:
Shao Feng Yu, Yi Zhi Zeng, Qin Zhang, Han Jie Gao, HX Liu, Jie Zhao, Jialei Liu, Woei Ji Song, Kurban Awuti, YiHui Lin
Publikováno v:
ECS Transactions. 60:709-713
For 20/16nm HK-last and MG-last process, Dummy poly is removed by Wet process. This paper studies the factors impacting the dummy poly removal process, and presents some models to explain the impacting factors. Implant process is one of main factors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2394f001ae698c1e6d63869a1a5431
https://doi.org/10.1149/06001.0709ecst
https://doi.org/10.1149/06001.0709ecst