Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Han He-Xiang"'
Publikováno v:
In New Carbon Materials June 2018 33(3):203-212
The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) pro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0204296
Akademický článek
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Publikováno v:
Carbon. 150:552
High-softening-point pitches were prepared from refined low-temperature coal tar pitch (R-CTP) by thermal bromination, followed by dehydrobromination/polymerization. R-CTP was first brominated in the presence of 5-20 wt.% bromine, and then heat-treat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efbc2ddb50939d46fea73e5fb1a4f41
https://doi.org/10.1016/j.carbon.2019.04.099
https://doi.org/10.1016/j.carbon.2019.04.099
Publikováno v:
In Carbon September 2019 150:552-552
Publikováno v:
Vacuum. 74:69-75
Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae7e25c7acf4d320d2af31b11561452
https://doi.org/10.1016/j.vacuum.2003.11.008
https://doi.org/10.1016/j.vacuum.2003.11.008
Publikováno v:
Chinese Physics Letters. 17:612-614
Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3 x 10(13) cm(-3). From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5202ae9376a2f44f0cb449cab066ca3
https://doi.org/10.1088/0256-307x/17/8/024
https://doi.org/10.1088/0256-307x/17/8/024
Autor:
Shen Wen-Jun, Han He-Xiang, Xu Huai-Zhe, Guo Xiao-Xu, Zhu Mei-Fang, Dong Bao-Zhong, Han Yi-Qin, Liu Jin-Long
Publikováno v:
Acta Physica Sinica. 47:1542
Microcrystalline silicon thin films were prepared by hot wire chemical vapor deposition with hydrogen dilution. Structures of the films were examined by Raman scattering, Fourier transform infrared (IR) and small angle X-ray scattering (SAXS)etc. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0969f50de186bf147664fa7cae223a2f
https://doi.org/10.7498/aps.47.1542
https://doi.org/10.7498/aps.47.1542
Autor:
Li Guo-Hua, Zong Wan-Hua, Han He-Xiang, Wang Zhao-Ping, Zhang Buo-Rui, Ma Shu-Yi, Qin Guo-Gang, Ma Zhen-Chang
Publikováno v:
Acta Physica Sinica. 47:502
Using a Ge-SiO2 (GSO) composite target with the Ge wafer in the target having percentage areas of 0%,5% and 10%,three types of nanometer Ge particles embedded Si oxide films were deposited on p-type Si substrates by the rf magnetron sputtering techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded40dbacae2cedbd1f3343d6954ae14
https://doi.org/10.7498/aps.47.502
https://doi.org/10.7498/aps.47.502
Autor:
Han He-Xiang, Wang Zhan-Guo, Li Guo-Hua, Dong Jian-Rong, Sun Dian-zhao, Wang Zhao-Ping, Liu Zhen-Xian, Lu Da-Cheng
Publikováno v:
Acta Physica Sinica. 45:1592
The photoluminescence of spontaneously ordered Ga0.5In0.5P alloy has been measured at room temperature and under hydrostatic pressure up to 7GPa. The direct-band gap of three ordered samples is lower than that of disordered sample by 115,92 and 43 me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74da98549b5095359496446207006606
https://doi.org/10.7498/aps.45.1592
https://doi.org/10.7498/aps.45.1592