Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Han Chin Chiu"'
Autor:
Joseph Tsai, Edward Yi Chang, Chih Chieh Yu, Yuen Yee Wong, Hai Dang Trinh, Chia-Yuan Chang, Chien I. Kuo, Hui Cheng Chang, Hong Quan Nguyen, Yueh Chin Lin, Han Chin Chiu, Chi Ming Chen, David Hwang, Jyun Yi Wu, Terrence Yu
Publikováno v:
Journal of Electronic Materials. 42:2439-2444
The electrical properties of Al2O3/n-InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage (C–V) frequency dispersion in accumulation (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ecc4de36d117f8c43dd09bf85d30a5
https://doi.org/10.1007/s11664-013-2616-x
https://doi.org/10.1007/s11664-013-2616-x
Autor:
Han-Chin Chiu, 邱漢欽
93
Pure and no monoclinic phase of orthorhombic LiMnO2 is hard to be prepared. It is usually synthesized by precursor under inert or reduced atmosphere. We first prepare the precursor via citrate process and the powder is calcined under 99% Argo
Pure and no monoclinic phase of orthorhombic LiMnO2 is hard to be prepared. It is usually synthesized by precursor under inert or reduced atmosphere. We first prepare the precursor via citrate process and the powder is calcined under 99% Argo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/33723084170051316941
Autor:
Pen Chang, M. L. Huang, Shao-Yun Wu, Minghwei Hong, Kang-Hua Wu, Tsung-Da Lin, Wen-Hsin Chang, J. Kwo, Han-Chin Chiu
Publikováno v:
Applied Physics Express. 4:114202
In-situ ultrahigh-vacuum-deposited Y2O3 2–3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8–9)×1011 eV-1 cm-2 near the midgap has been measured using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373efddd13509229a30afbd4e1bc4732
https://doi.org/10.1143/apex.4.114202
https://doi.org/10.1143/apex.4.114202