Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Han Chieh Ho"'
Autor:
Jin-Ji Dai, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, Wei-Fan Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1766 (2021)
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the samp
Externí odkaz:
https://doaj.org/article/a8cd7a776808476291d8e78add2dc1af
Autor:
Jing Rong Peng, Jin Ji Dai, Han Chieh Ho, Hua Chiang Wen, Wei Fan Wang, Ssu Kuan Wu, Wu Ching Chou, Thi Thu Mai, Cheng Wei Liu
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 1766, p 1766 (2021)
Volume 11
Issue 7
Nanomaterials, Vol 11, Iss 1766, p 1766 (2021)
Volume 11
Issue 7
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7285c4f75c74ba078d2395e6d5b32705
http://europepmc.org/articles/PMC8308141
http://europepmc.org/articles/PMC8308141
Publikováno v:
Materials Science Forum. 858:229-232
In this study, different parameters of 4H-SiC epitaxial growth were used to investigate the influence on surface pits density. It was found that the density of surface pits can be reduced significantly at lower C/Si ratio condition but doping uniform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d725cb20b3ac714880ffdc899b9d8957
https://doi.org/10.4028/www.scientific.net/msf.858.229
https://doi.org/10.4028/www.scientific.net/msf.858.229
Publikováno v:
Solid-State Electronics. 73:51-55
This study investigates the device characteristics of InAs/AlSb HEMTs subjected to different periods of time storage in atmospheric ambiance after fabrication. Devices that have undergone 6 months of storage exhibit an increase of saturation drain cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f14622b12cd9158ee418a2206c65165
https://doi.org/10.1016/j.sse.2012.03.006
https://doi.org/10.1016/j.sse.2012.03.006
Publikováno v:
Electronics Letters. 49:1026-1028
The successful fabrication of InAlSb/InAs and InAlSb/InAsSb HFETs using recessed gate technology is reported. Epitaxial growth, device fabrication and characterisation are discussed in this Letter. A comparison of the two kinds of HFETs shows that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a4e3edd56ebfb1c15765e91e230bfe
https://doi.org/10.1049/el.2013.0788
https://doi.org/10.1049/el.2013.0788
Publikováno v:
IEEE Electron Device Letters. 33:964-966
This letter reports the effect of growth temperature on carrier transport characteristics in In0.4Ga0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9859f0afa2055a99c73e161c8125e8
https://doi.org/10.1109/led.2012.2193656
https://doi.org/10.1109/led.2012.2193656
Publikováno v:
2012 Asia Pacific Microwave Conference Proceedings.
In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole double-throw (SPDT) broadband switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcfe3e39401a8666acf514545e160b45
https://doi.org/10.1109/apmc.2012.6421544
https://doi.org/10.1109/apmc.2012.6421544
Autor:
Han-Chieh Ho, 何漢傑
101
The development of high electron mobility transistors (HEMTs) started in 1978. Modulation-doped AlGaAs/GaAs heterostructures were immediately demonstrated and revealed the formation of two-dimentional electron gas (2DEG) with enhanced electr
The development of high electron mobility transistors (HEMTs) started in 1978. Modulation-doped AlGaAs/GaAs heterostructures were immediately demonstrated and revealed the formation of two-dimentional electron gas (2DEG) with enhanced electr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55987994673006996410
Autor:
Geng-Ying Liau, H.-K. Lin, Clement Hsingjen Wann, Han-Chieh Ho, Pei-Chin Chiu, Wen-Chin Lee, Ta-Ming Kuan, Chih-Hsin Ko, Jen-Inn Chyi, Meng-Kuei Hsieh
Publikováno v:
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).
Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In 0.44 Ga 0.56 Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In 0.44 Ga 0.56 Sb channel layer was compressively strained to enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1df5b14e6f69715a17b5f53c51640f28
https://doi.org/10.1109/iciprm.2010.5516381
https://doi.org/10.1109/iciprm.2010.5516381
Autor:
H.-K. Lin, Jen-Inn Chyi, Geng-Ying Liau, Wen-Chin Lee, Meng-Kuei Hsieh, Chih-Hsin Ko, Han-Chieh Ho, Ta-Wei Fan, Ta-Ming Kuan, Pei-Chin Chiu, Clement Hsingjen Wann
Publikováno v:
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57d4f8a03bb1260895c69d3fe42e5841
https://doi.org/10.1109/iciprm.2010.5516253
https://doi.org/10.1109/iciprm.2010.5516253