Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Han Chao Gao"'
Autor:
Fang-Yuan Qian, Yu-Dong Guo, Juan Zu, Jin-Hua Zhang, Yi-Ming Zheng, Idriss Ali Abdoulaye, Zhao-Hui Pan, Chun-Ming Xie, Han-Chao Gao, Zhi-Jun Zhang
Publikováno v:
Acta Neuropathologica Communications, Vol 9, Iss 1, Pp 1-20 (2021)
Abstract Mutations in the DNAJB6 gene have been identified as rare causes of myofibrillar myopathies. However, the underlying pathophysiologica mechanisms remain elusive. DNAJB6 has two known isoforms, including the nuclear isoform DNAJB6a and the cy
Externí odkaz:
https://doaj.org/article/e97274fad27041c2892e2fb5bedb7ecf
Publikováno v:
Frontiers in Cell and Developmental Biology, Vol 8 (2020)
Doxorubicin (DOX), the first-line chemotherapy for bladder cancer, usually induces side effects. We previously demonstrated that green tea polyphenol EGCG had potent anti-tumor effect in bladder cancer via down regulation of NF-κB. This study aimed
Externí odkaz:
https://doaj.org/article/55b8772530da42449474640070779691
Publikováno v:
Gastroenterology Report
Background Green tea is a popular beverage worldwide and epigallocatechin-3-gallate (EGCG) is the most bioactive polyphenol in green tea. Our study aims to investigate the anti-proliferation and anti-migration effects of EGCG against colorectal-cance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202c4179f38f322bd7da5394547f27ac
http://europepmc.org/articles/PMC7962736
http://europepmc.org/articles/PMC7962736
Publikováno v:
Materials Science Forum. 1014:43-51
Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82cced1555fd490bfdda5b4830b76f20
https://doi.org/10.4028/www.scientific.net/msf.1014.43
https://doi.org/10.4028/www.scientific.net/msf.1014.43
Autor:
Fang-Yuan Qian, Guo, Yu-Dong, Zu, Juan, Zhang, Jin-Hua, Zheng, Yi-Ming, Idriss Ali Abdoulaye, Pan, Zhao-Hui, Xie, Chun-Ming, Han-Chao Gao, Zhang, Zhi-Jun
Additional file 1: Table.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f4c8b3daf008bb186308d7897b09edb
Autor:
Fang-Yuan Qian, Guo, Yu-Dong, Zu, Juan, Zhang, Jin-Hua, Zheng, Yi-Ming, Idriss Ali Abdoulaye, Pan, Zhao-Hui, Xie, Chun-Ming, Han-Chao Gao, Zhang, Zhi-Jun
Additional file 1: Figures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50d856016f06110458405d58cab2e969
Publikováno v:
Advanced Materials Research. :442-445
Heavily P type In0.51Ga0.49As was grown with hole concentration from 3.3E19cm-3 to 4.6E19cm-3. Standard (001) surface Raman backscattering geometry was used to measure samples. Two mode behavior and LO phonon-plasmon-coupled mode (LOPC) were observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8a7d4bbfc30a75b039b9a87451ab59
https://doi.org/10.4028/www.scientific.net/amr.887-888.442
https://doi.org/10.4028/www.scientific.net/amr.887-888.442
Publikováno v:
Applied Mechanics and Materials. :1673-1676
A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b5ba42d12dc1dfde16c46cfb5a10de
https://doi.org/10.4028/www.scientific.net/amm.347-350.1673
https://doi.org/10.4028/www.scientific.net/amm.347-350.1673
Autor:
Jun Ming Zhou, Wen Xin Wang, Lin Sheng Liu, Zhongwei Jiang, Hong Chen, Zhihua Li, Han Chao Gao
Publikováno v:
Journal of Crystal Growth. :181-184
Buffer influence on AlSb/InAs/AlSb quantum wells (QWs) was investigated by using Hall measurement, atomic force microscopy (AFM) and X-ray diffraction (XRD). We found that the electron mobility of AlSb/InAs/AlSb QW with GaSb buffer is higher than tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a34c28c9af898861af0f2f0a2ffbb0
https://doi.org/10.1016/j.jcrysgro.2006.11.295
https://doi.org/10.1016/j.jcrysgro.2006.11.295
Autor:
Fang-Yuan Qian, Zuo-Lin Li, Yu-Dong Guo, Han-Chao Gao, Li-Hua Gu, Kai Le, Chun-Ming Xie, Bin Wang, Zhi-Jun Zhang
Publikováno v:
American Journal of Physiology: Renal Physiology; Nov2019, Vol. 317 Issue 5, pF1265-F1273, 9p