Zobrazeno 1 - 4 of 4 pro vyhledávání: '"Hamzah, Mohd Zuhir"'
1
Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
Autor: Chan Bun Seng, Ghosh Bablu, Hamzah Mohd Zuhir, Nurmin Bolong, Saad Ismail, Khairul Anuar Mohamad
Publikováno v: Advanced Materials Research. 1107:496-501
The effect of the Ge mole fraction in a Si1-xGex on single and dual channel Vertical Strained SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold voltage, breakdown voltage and sub-threshold slope of the devices wa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8747f9a4dc8d933b0d00a0c8e5223ceb
https://doi.org/10.4028/www.scientific.net/amr.1107.496
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2
Conference
Performance Analysis of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP).
Autor: Saad, Ismail, Hamzah, Mohd Zuhir Bin, Seng, Chan Bun, Mohamad, Khairul Anuar, Ghosh, Bablu K., Bolong, Nurmin, Ismail, Razali
Publikováno v: 2013 Fifth International Conference on Computational Intelligence, Modelling & Simulation; 2013, p375-380, 6p
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3
Conference
Compatibility issues of Si technology with higher band gap materials for RF applications.
Autor: Ghosh, Bablu K., Saad, Ismail, Mohamad, Khairul Anuar, Bolong, Nurmin, Parimon, Norfarariyanti, Alias, Afishah, Hamzah, Mohd Zuhir
Publikováno v: 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE); 1/ 1/2012, p407-410, 4p
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