Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hammam Kattan"'
Publikováno v:
IEEE Access, Vol 9, Pp 83950-83962 (2021)
Today, more and more commodity hardware devices are used in safety-critical applications, such as advanced driver assistance systems in automotive. These applications demand very high reliability of electronic components even in adverse environmental
Externí odkaz:
https://doaj.org/article/d56cd327e0574c26a0c37456501f8968
Impact of NCFET Technology on Eliminating the Cooling Cost and Boosting the Efficiency of Google TPU
Autor:
Sami Salamin, Florian Klemme, Jorg Henkel, Hussam Amrouch, Yogesh Singh Chauhan, Hammam Kattan, Georgios Zervakis
Publikováno v:
IEEE Transactions on Computers. 71:906-918
Recent breakthroughs in Neural Networks (NNs) led to significant accuracy improvements. This accuracy improvement comes at the cost of immense increase in computation demands. NNs became one of the most common and computationally intensive workloads
Publikováno v:
IEEE Micro. 41:67-73
On-demand cooling is inevitable to maximize the processor’s performance, while fulfilling thermal constraints—this holds more in advanced technologies, where localized hotspots change during runtime. In this work, we propose to adopt an array of
Autor:
Hammam Kattan, Hussam Amrouch
Publikováno v:
2022 35th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI).
Autor:
Georgios Zervakis, Sami Salamin, Jorg Henkel, Hammam Kattan, Hussam Amrouch, Iraklis Anagnostopoulos
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:3842-3855
Neural processing units (NPUs) are becoming an integral part in all modern computing systems due to their substantial role in accelerating neural networks (NNs). The significant improvements in cost-energy-performance stem from the massive array of m
Autor:
Victor M. van Santen, Jorg Henkel, Hussam Amrouch, Simon Thomann, Hammam Kattan, Sami Salamin, Om Prakash
Publikováno v:
IOLTS
The introduction of FinFET technology as an effective solution to continue technology scaling has pushed self-heating effects to the forefront of reliability challenges, especially at the 14nm technology node and below. Due to limited silicon volume