Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Hamin, Park"'
Publikováno v:
Biomimetics, Vol 9, Iss 3, p 157 (2024)
Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations. Th
Externí odkaz:
https://doaj.org/article/770769df3f6a4f5bbf0f3ffb8d98d5af
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 203 (2024)
This study proposes a phosphosilicate glass (PSG)-based electrolyte gate synaptic transistor with varying phosphorus (P) concentrations. A metal oxide semiconductor capacitor structure device was employed to measure the frequency-dependent (C-f) capa
Externí odkaz:
https://doaj.org/article/2fe46cd33d2a4d0a8106660650ab1da6
Autor:
Hamin Park, Dong Chan Kim
Publikováno v:
Micromachines, Vol 15, Iss 1, p 66 (2023)
Stretchable displays, capable of freely transforming their shapes, have received significant attention as alternatives to conventional rigid displays, and they are anticipated to provide new opportunities in various human-friendly electronics applica
Externí odkaz:
https://doaj.org/article/2746fcffe4794b89b1c890d621c9636e
Publikováno v:
Gels, Vol 9, Iss 12, p 931 (2023)
In this study, a transparent and flexible synaptic transistor was fabricated based on a random-network nanowire (NW) channel made of indium gallium zinc oxide. This device employs a biocompatible chitosan-based hydrogel as an electrolytic gate dielec
Externí odkaz:
https://doaj.org/article/ae8c9a36afcd4e8997b9cf9bea4043f4
Publikováno v:
Biomimetics, Vol 8, Iss 7, p 532 (2023)
In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity
Externí odkaz:
https://doaj.org/article/4b5e927e952d4ffb9217bba326ed5768
Publikováno v:
Biomimetics, Vol 8, Iss 6, p 506 (2023)
This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. The transistor e
Externí odkaz:
https://doaj.org/article/4b20df73147046f88d8cf7c8fd37ec71
Publikováno v:
Biomimetics, Vol 8, Iss 5, p 432 (2023)
In this study, we enhance the synaptic behavior of artificial synaptic transistors by utilizing nanowire (NW)-type polysilicon channel structures. The high surface-to-volume ratio of the NW channels enables efficient modulation of the channel conduct
Externí odkaz:
https://doaj.org/article/cf323ef6ba954ffa8b1aec9bfef2cdd9
Publikováno v:
Molecules, Vol 28, Iss 13, p 5174 (2023)
This study proposes a high-performance organic–inorganic hybrid memristor for the development of neuromorphic devices in the memristor-based artificial synapse. The memristor consists of a solid polymer electrolyte (SPE) chitosan layer and a titani
Externí odkaz:
https://doaj.org/article/585eb53bae4e4bf8997237a5af1a4f3c
Autor:
Jun-Hwe Cha, Byung Chul Jang, Jungyeop Oh, Changhyeon Lee, Sang Yoon Yang, Hamin Park, Sung Gap Im, Sung-Yool Choi
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 6, Pp n/a-n/a (2022)
As the use of artificial intelligence (AI) soars, the development of novel neuromorphic computing is demanding because of the disadvantages of the von Neumann architecture. Furthermore, extensive research on electrochemical metallization (ECM) memris
Externí odkaz:
https://doaj.org/article/bd5d827e72db4d5fb739e6520b56adfb
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 2978 (2022)
In this study, a high-performance bio-organic memristor with a crossbar array structure using milk as a resistive switching layer (RSL) is proposed. To ensure compatibility with the complementary metal oxide semiconductor process of milk RSL, a high-
Externí odkaz:
https://doaj.org/article/f24088fc86f845a7a2b62517abe73ae2