Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation

Autor: Cristina Medina-Bailon, Hamilton Carrillo-Nunez, Jaehyun Lee, Carlos Sampedro, Jose Luis Padilla, Luca Donetti, Vihar Georgiev, Francisco Gamiz, Asen Asenov

Publikováno v: Micromachines, Vol 11, Iss 2, p 204 (2020)

As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D

Externí odkaz: https://doaj.org/article/6a09f8f9c49f491d8944226257fc36a4

Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

Autor: Vihar P. Georgiev, Asen Asenov, Hamilton Carrillo-Nunez, Nadezhda Dimitrova

Publikováno v: IEEE Electron Device Letters. 40:1366-1369

This letter investigates the possibility to replace numerical TCAD device simulations with a multi-layer neural network (NN). We explore if it is possible to train the NN with the required accuracy in order to predict device characteristics of thousa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62a7ef1423c83c06bc91b2385effb1ef
https://doi.org/10.1109/led.2019.2931839

Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)

Autor: Vihar P. Georgiev, Oves Badami, Tapas Dutta, Cristina Medina-Bailon, Daniel Nagy, Fikru Adamu-Lema, Hamilton Carrillo-Nunez, Asen Asenov

The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ce0072af3bb01e1e16118e70d66bcb
https://eprints.gla.ac.uk/226042/2/226042.pdf

Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

Autor: Vihar P. Georgiev, Vasanthan Thirunavukkarasu, Hamilton Carrillo-Nunez, Tapas Dutta, Fikru Adamu-Lema, Oves Badami, Asen Asenov, Salim Berrada, Jaehyun Lee, Cristina Medina-Bailon

The aim of this paper is to present a flexible and open-source multi-scale simulation software which has been developed by the Device Modelling Group at the University of Glasgow to study the charge transport in contemporary ultra-scaled Nano-CMOS de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea69c41271f4ed03dd2c446f2a5ec9fd
https://eprints.gla.ac.uk/215701/7/215701.pdf

Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

Autor: Vihar P. Georgiev, Salim Berrada, Hamilton Carrillo-Nunez, Katharina Lilienthal, Kenneth B. K. Teo, Nicole Nagy, Marcus Wislicenus, Jie Liang, Aida Todri-Sanial, Benjamin Uhlig, Dipankar Kalita, Jean Dijon, Fikru Adamu-Lema, Bingan Chen, Hanako Okuno, Asen Asenov, Toufik Sadi, R. Ramos, Gonçalo Gonçalves, Jaehyun Lee, Reetu Raj Pandey

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (9), pp.3884-3892. ⟨10.1109/TED.2018.2853550⟩
IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3884-3892. ⟨10.1109/TED.2018.2853550⟩

International audience; In this paper, we report a hierarchical simulation study on the electromigration problem in Cu-CNT composite interconnects. Our work is based on the investigation of the activation energy and self-heating temperature using a m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c78727a5ba8fc4478956c1054a80c658
https://doi.org/10.1109/ted.2018.2853550