Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hamid Fardi"'
Autor:
Hamid Fardi, Fatima Buny
Publikováno v:
International Journal of Photoenergy, Vol 2013 (2013)
Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS photovoltaic solar cell. The role of several limiting factors such as back contact Schottky barrier and its relationship to the doping density and layer t
Externí odkaz:
https://doaj.org/article/d1dbb2fbe3e445fcb64754041373cad1
Autor:
Hamid Fardi, Z. D. Kovziridze, N. S. Nizharadze, G. Tabatadze, M. Mshvildadze, E. Nikoleishvili, Z. Mestvirishvili, Chávez-Sandoval Blanca Estela, A. Ibáñez-Hernández Miguel Angel, García-Franco Francisco, Galindo-Pérez Ezel Jacome, Abrica González Paulina, Martínez-Jiménez Anatolio, Balderas López José Abraham, Binu Sharma, S. K. Rahman, Panagis G. Papadopoulos, Christopher G. Koutitas, Panos P. Lazaridis, Larbi Hamiche, Salah Saad, Leila Merabet, Fares Zaamouche, Lizhi Zhang, Fan Li, Bo Sun, Chenghui Zhang, Aws Zuhair Sameen, Rosmina Jaafar, Mohammed Hasan Alwan, Jerzy Ratajski, Roman Olik, Tomasz Suszko, Jerzy Dobrodziej, Jerzy Michalski, Renita Sharon Monis, Asha Crasta, Sher Afghan Khan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63578a8d3518a8d6122cc4ea4d3f2afc
https://doi.org/10.9734/bpi/rder/v5
https://doi.org/10.9734/bpi/rder/v5
Autor:
C. I. C. Ogbonna, C. U. Ugonna, Bogdan Cioruța, Maruf A. Aminu, Ajoy Das, Orua Antia, O. F. Ashcroft, Kasturi Ghosh, Mikko Virmavirta, A. I. Ogbonna, Aquil Ahmad, Ahti Rahikainen, Mirela Coman, William Olosunde, A. P. Onwualu, N. M. Bunza, Moyosore Adedapo Jolaoso, Hamid Fardi, Stephen Jobson Mitchual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d3e8f91d194f6e6a2e806db2ec8918
https://doi.org/10.9734/bpi/aast/v6
https://doi.org/10.9734/bpi/aast/v6
Autor:
Hamid Fardi
Publikováno v:
Physical Science International Journal. 7:127-136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9d502e9bfc1449d048ae076678840f8
https://doi.org/10.9734/psij/2015/17567
https://doi.org/10.9734/psij/2015/17567
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2800-2803
We report here on the growth of Hg0.8Cd0.2Te on lattice matched substrates of CdTe0.96Se0.04, by organometallic vapor phase epitaxy. Layer properties are compared with those for comparable layers grown on CdTe substrates. It is shown that the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15817d59d85d0b9ed2a9f7ae09b5e9e
https://doi.org/10.1116/1.575510
https://doi.org/10.1116/1.575510
Publikováno v:
Applied Physics Letters. 52:392-394
We report here on the growth of Hg0.8Cd0.2Te on lattice‐matched substrates of CdTe0.96Se0.04 by organometallic vapor phase epitaxy. Results are compared with those for comparable layers grown on CdTe substrates. It is shown that the use of lattice
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b47dad518ea27980004a1b31d63c62a
https://doi.org/10.1063/1.99476
https://doi.org/10.1063/1.99476
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