Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Hamid Amini Moghadam"'
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mo
Externí odkaz:
https://doaj.org/article/8f3596bb4fd0489cbccbdb69c4d98611
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://doaj.org/article/575851fd107e46e3b9de43ad46e4914a
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 98038-98043 (2020)
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV
Externí odkaz:
https://doaj.org/article/30929905b80e4ad5bee0b1b413fcb4c8
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 187043-187051 (2020)
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching interval
Externí odkaz:
https://doaj.org/article/f55a9104c9d84f99a948349cced1e22c
Publikováno v:
Energies, Vol 16, Iss 4, p 1771 (2023)
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifica
Externí odkaz:
https://doaj.org/article/02c9197adaef49ec9e157a3dea1e3e26
Autor:
Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 468-474 (2018)
This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an
Externí odkaz:
https://doaj.org/article/16ee35701d25404fbc2ac6a017c61f6c
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Transactions on Electron Devices. 69:6225-6230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ffcadb3e68b24a3610c28238f9bb2e
https://doi.org/10.1109/ted.2022.3206184
https://doi.org/10.1109/ted.2022.3206184
Publikováno v:
Nanomanufacturing. 1:171-175
This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75eeeba591653e71e10c07bb0e7c858a
https://doi.org/10.3390/nanomanufacturing1030012
https://doi.org/10.3390/nanomanufacturing1030012
Autor:
Tuan-Khoa Nguyen, Hong-Quan Nguyen, Toan Dinh, Nam-Trung Nguyen, Yong Zhu, Hamid Amini Moghadam, Dzung Viet Dao, Jisheng Han, Thanh Viet Nguyen, Sima Dimitrijev
Publikováno v:
IEEE Transactions on Electron Devices. 68:1495-1500
This article presents the design and characterization of a direct current (dc) sensor utilizing the Hall effect in AlGaN/GaN 2-D electron gas (2DEG) four-terminal devices and a flux concentrator. The sensor was fabricated from an AlGaN/GaN/Si wafer g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bebb4997d7c7361d1a07eb7de7dfd753
https://doi.org/10.1109/ted.2021.3054360
https://doi.org/10.1109/ted.2021.3054360
Autor:
Hamid Amini Moghadam, Utkarsh Jadli, Mayank Chaturvedi, Peyush Pande, Sima Dimitrijev, Daniel Haasmann
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::715d79b4a8e1c99be4e1b4a14125d1de
https://doi.org/10.1109/access.2021.3102614
https://doi.org/10.1109/access.2021.3102614