Zobrazeno 1 - 10
of 166
pro vyhledávání: '"Hamid Amini"'
Publikováno v:
Heliyon, Vol 10, Iss 16, Pp e36422- (2024)
Today, micro-grids (MGs) include all kinds of energy storage systems (ESSs), wind turbines (WTs), photovoltaic (PV), combined heat and power (CHP), etc., also demand response are active on the demand side. In this paper, single-level robust methods f
Externí odkaz:
https://doaj.org/article/8c1c14cbcf7e4714a24cfd2afb0b615f
Publikováno v:
PLoS ONE, Vol 19, Iss 7, p e0305745 (2024)
Power system researcher have turned to Micro-Grids (MG) for higher reliability, greater flexibility, lower operating costs and losses, and lower CO2 emissions at the distribution system. This paper presents a single-level stochastic optimization fram
Externí odkaz:
https://doaj.org/article/c4c681cdd9f047ed8e8b04558e43a5e3
Publikováno v:
Journal of Modern Psychology, Vol 2, Iss 4, Pp 28-34 (2022)
The aim of this study is to investigate the general health, resilience, and identity crisis among children from families supported by the Imam Khomeini Relief Committee, as well as predicting the general health of individuals based on resilience and
Externí odkaz:
https://doaj.org/article/5b929c8531db44828c5510be7c2054c2
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mo
Externí odkaz:
https://doaj.org/article/8f3596bb4fd0489cbccbdb69c4d98611
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://doaj.org/article/575851fd107e46e3b9de43ad46e4914a
Publikováno v:
Energies, Vol 16, Iss 4, p 1771 (2023)
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. Specifica
Externí odkaz:
https://doaj.org/article/02c9197adaef49ec9e157a3dea1e3e26
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 98038-98043 (2020)
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV
Externí odkaz:
https://doaj.org/article/30929905b80e4ad5bee0b1b413fcb4c8
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 187043-187051 (2020)
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching interval
Externí odkaz:
https://doaj.org/article/f55a9104c9d84f99a948349cced1e22c
Autor:
Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 468-474 (2018)
This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an
Externí odkaz:
https://doaj.org/article/16ee35701d25404fbc2ac6a017c61f6c
Publikováno v:
Majallah-i Dānishgāh-i ̒Ulūm-i Pizishkī-i Qum, Vol 9, Iss 1, Pp 53-58 (2015)
Background and Objectives: Due tosomecultural problems, most people, especially women cannotgo togymsfor exercise. Therefore,researchersare trying todesign tools, which different individuals can easily exercise at anyplace and any time. One ofthese t
Externí odkaz:
https://doaj.org/article/b8de38231c454581bd972d0a5a266416