Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hamed Jooypa"'
Publikováno v:
IEEE Access, Vol 9, Pp 65340-65345 (2021)
In this paper, we model statistical correlation between overshooting effect and propagation delay time in nano-CMOS technology considering the influence of intrinsic parameter fluctuations caused by discreteness of charge and granularity of matter. T
Externí odkaz:
https://doaj.org/article/0a6fb8e5009248eeadf346cb2a6deaec
Autor:
Daryoosh Dideban, Hamed Jooypa
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:1880-1884
In this brief, we propose three different strategies to estimate the propagation delay time of a nano-CMOS inverter subject to statistical variability. Based on statistical distribution of efficient parameters in the selected compact model, we have r
Autor:
Daryoosh Dideban, Hamed Jooypa
Publikováno v:
IEEE Transactions on Electron Devices. 65:2714-2720
With shrinking transistor dimensions into sub-50-nm regime, statistical variability (SV) causes a great impact on the drain current and threshold voltage of nano-MOSFETs. In this paper, with emphasis on the propagation delay time of an inverter in 35
Publikováno v:
Analog Integrated Circuits and Signal Processing. 95:295-306
In this paper, the context of modeling of the impact of mismatch and statistical variations on analogue circuit building blocks is emphasized. The aim is to develop a new algorithm which predicts the statistical behavior of important parameters of an
Autor:
Hamed Jooypa, Daryoosh Dideban
Publikováno v:
Journal of Computational Electronics. 17:192-204
In this paper, the impact of statistical variability on the accuracy of a propagation delay time compact model (CM) is analyzed. Hence, we aim to select an appropriate CM and extend it in the presence of statistical variability using a number of elec
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:051002
Tunneling field effect devices suffer from two main problems comprised of low on-state current and intrinsic ambipolar conduction. In the present work, we propose a graphene tunneling field effect transistor (GTFET), that uses graphene nanoribbon (GN
Publikováno v:
International Journal of Computer Applications. 118:37-40
A novel simulation algorithm capable of capturing statistical variability manifests in digital design is proposed. The only estimations for the algorithm inputs are the standard deviations of channel length and the gate voltage. Implementing the algo