Zobrazeno 1 - 5
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pro vyhledávání: '"Hamdy, Abd El Hamid A."'
Autor:
Wadee, Ereny Atef, Easa, Saadia Mohamed, Aly Hamdy, Abd El Hamid, Amin, Hala A., Al-Mehallawy, Adel A., Elkady, Nadia A.
Publikováno v:
Egyptian Journal of Botany; 2024, Vol. 64 Issue 3, p855-871, 17p
Akademický článek
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Publikováno v:
IET Circuits, Devices & Systems. 12:341-346
Analytical Verilog-A compatible 2D model including quantum short channel effects and confinement for the potential, threshold voltage and the carrier charge sheet density for symmetrical lightly doped double-gate metal-oxide-semiconductor field effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526bf00f1cecc8586d7c200c82f3bae0
https://doi.org/10.1049/iet-cds.2017.0046
https://doi.org/10.1049/iet-cds.2017.0046
Publikováno v:
Journal of Computational Electronics. 14:500-505
An analytical and scalable model for the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f209ca7667765a9e9223ffb356786f8
https://doi.org/10.1007/s10825-015-0678-0
https://doi.org/10.1007/s10825-015-0678-0
Publikováno v:
Solid-State Electronics. 51:414-422
We have developed analytical, models for the threshold voltage, the subthreshold swing and DIBL of undoped cylindrical Gate All Around (GAA) MOSFETs and Double Gate (DG) MOSFET using an analytical solution of the two-dimensional (2D) Poisson equation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8493f4ea5b1abf2aff89cd97dfce020
https://doi.org/10.1016/j.sse.2006.12.009
https://doi.org/10.1016/j.sse.2006.12.009