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pro vyhledávání: '"Halty, Sébastien"'
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Huet, Karim
The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and performance improvement, while alleviating difficulties encountered in traditional planar scaling.
Externí odkaz:
http://arxiv.org/abs/2209.05337
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Raynal, Pierre-Edouard, Huet, Karim, Mazzamuto, Fulvio, Joshi, Abhijeet, Basol, Bulent M., Alba, Pablo Acosta, Kerdilès, Sébastien
Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds (us) strongly limit the vertic
Externí odkaz:
http://arxiv.org/abs/2205.04669
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Alba, Pablo Acosta, Halty, Sebastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdilés, Sébastien, Mazzamuto, Fulvio
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where the applicable thermal budget is restricted. In this work, UV-LA is performed to regro
Externí odkaz:
http://arxiv.org/abs/2204.12167
Autor:
Tabata, Toshiyuki, Raynal, Pierre-Edouard, Rozé, Fabien, Halty, Sébastien, Thuries, Louis, Cristiano, Fuccio, Scheid, Emmanuel, Mazzamuto, Fulvio
UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line resistance by enlarging metal grains in lines or in thin films, while
Externí odkaz:
http://arxiv.org/abs/2111.07580
Autor:
Tabata, Toshiyuki, Rozé, Fabien, Alba, Pablo Acosta, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdilès, Sébastien, Mazzamuto, Fulvio
UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a
Externí odkaz:
http://arxiv.org/abs/2111.07577
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