Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Halina Krzyzanowska"'
Publikováno v:
Materials Research Express, Vol 7, Iss 9, p 095601 (2020)
We performed degenerate pump-probe transmission measurements of graphene supported on glass for a range of pump fluences that enable us to observe both positive and negative deferential transmission dynamics. Our results show that at an intermediate
Externí odkaz:
https://doaj.org/article/58bede89592d4ee296591b97eabd03eb
Autor:
Andrey Baydin, Halina Krzyzanowska, Munthala Dhanunjaya, S. V. S. Nageswara Rao, Jimmy L. Davidson, Leonard C. Feldman, Norman H. Tolk
Publikováno v:
APL Photonics, Vol 1, Iss 3, Pp 036102-036102-8 (2016)
Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications requir
Externí odkaz:
https://doaj.org/article/20f68b28ae5e4562a780b92f9c4868f5
Autor:
Adam Dodson, Hongrui Wu, Anuruddh Rai, Sohm Apte, Andrew O’Hara, Benjamin Lawrie, Yongqiang Wang, Akira Ueda, Halina Krzyżanowska, Michael Titze, Jimmy Davidson, Anthony Hmelo, Agham B. Posadas, Alexander A. Demkov, Sokrates T. Pantelides, Leonard C. Feldman, Norman H. Tolk
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-9 (2024)
Abstract Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of th
Externí odkaz:
https://doaj.org/article/ed75df29ff45480a889ab8e6d7efa934
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 440:36-40
The unique capabilities of time domain Brillouin scattering (TDBS) for studying post-implantation effects on optical and opto-elastic properties of semiconductors are discussed. This method utilizes coherent acoustic phonons to measure depth-dependen
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoele
Time-domain Brillouin scattering has proved to be an unique tool for determining depth dependent material properties. Here, we show the influence of doping level in GaAs on Brillouin oscillations. Measurements were performed on intrinsic, n-type and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6c9a0da928b1f9cb374bcee759ea860
http://arxiv.org/abs/1910.13344
http://arxiv.org/abs/1910.13344
Publikováno v:
ACS Photonics. 3:564-570
Systematic studies of the relaxation processes in nm-thick Er-doped SiO2/nc-Si multilayers have been conducted using cw photoluminescence and time-resolved photoluminescence. The size of the Si nanocrystals is determined by thickness of the Si layer.
Publikováno v:
Materials Research Express. 7:095601
We performed degenerate pump-probe transmission measurements of graphene supported on glass for a range of pump fluences that enable us to observe both positive and negative deferential transmission dynamics. Our results show that at an intermediate
Publikováno v:
Scientific Reports. 8
A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.
Publikováno v:
Scientific Reports
The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoele