Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Haldane S. Henry"'
Autor:
Robert Davis, Joleyn E. Brewer, Haldane S. Henry, Stanton Earl Weaver, Ramakrishna Vetury, Gary Mandrusiak, Oliver Charles Boomhower, Nannan Chen
Publikováno v:
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
This paper describes a convection-based alternative to conduction heat spreaders that uses liquid microchannels to remove heat directly from the transistors. The concept connects microchannels etched directly into the die with a hydraulic circuit tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d175b61c4aefafe704c159f6bab3a64
https://doi.org/10.1109/itherm.2014.6892386
https://doi.org/10.1109/itherm.2014.6892386
Autor:
J. Abdou, M. CdeBaca, Bruce M. Green, M. Miller, Haldane S. Henry, C-L. Liu, Darrell G. Hill, Olin L. Hartin, Charles E. Weitzel, Karen E. Moore, F. Clayton, J. Selbee
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
This report presents the DC, pulsed I–V, small signal, and large signal characteristics of Freescale’s 48 V GaN HFET technology. Characterization of large signal performance for a 12.6 mm at 48V drain bias shows 89 W output power with an associat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d74d5a7283e2c0a9a7b257a81403383
https://doi.org/10.1109/mwsym.2008.4632916
https://doi.org/10.1109/mwsym.2008.4632916
Autor:
Haldane S. Henry, J. Crowder, F. Clayton, M. Miller, Bruce M. Green, Chun-Li Liu, E. Mares, R. Lawrence, Olin L. Hartin, Charles E. Weitzel, Karen E. Moore, J. Abdou
Publikováno v:
Advanced Semiconductor Devices.
This paper presents Freescale's baseline GaN device technology for wireless infrastructure applications. At 48 V drain bias and 2.1 GHz operating frequency 10-11 W/mm, 62-67% power-added efficiency (PAE) is realized on 0.3 mm devices and 74 W (5.9 W/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32e008c8a41fc2adfbbf41b99a0d5517
https://doi.org/10.1142/9789812770332_0002
https://doi.org/10.1142/9789812770332_0002
Autor:
J. Abdou, M. Miller, R. Lawrence, Haldane S. Henry, Bruce M. Green, J. Selbee, Karen E. Moore
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
This report presents a GaN HFET technology for wireless infrastructure applications. Using an optimized process, low DC-RF dispersion is seen via pulsed I-V measurements. At a drain bias of 48 V and frequency of 2.14 GHz, devices with 0.3 mm gate per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0da6ec52a613c17f05467466a234df
https://doi.org/10.1109/mwsym.2006.249731
https://doi.org/10.1109/mwsym.2006.249731
Publikováno v:
MRS Proceedings. 863
Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f391aaf59dca6b84c4fff251167cc54
https://doi.org/10.1557/proc-863-b8.30
https://doi.org/10.1557/proc-863-b8.30