Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hala El Rammouz"'
Autor:
Mohammed El Amrani, Julien Buckley, Thomas Kaltsounis, David Plaza Arguello, Hala El Rammouz, Daniel Alquier, Matthew Charles
Publikováno v:
Crystals, Vol 14, Iss 6, p 553 (2024)
In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density of 2.5 kA/cm2, a specific on-resistance RON,sp of 1.9 mΩ cm2 despi
Externí odkaz:
https://doaj.org/article/92ff3a7f558c48c1ada4c451dcb90ed2
Autor:
Lucie Dupont, Jamal Assaad, Ziad Herro, Farouk Benmeddour, Emmanuel Moulin, Hala El Rammouz, Youssef Zaatar, Nikolay Smagin
Publikováno v:
MATEC Web of Conferences
1st International Conference of Engineering Risk (INCER 2019)
1st International Conference of Engineering Risk (INCER 2019), Apr 2019, Beyrouth, Lebanon. pp.01001, ⟨10.1051/matecconf/201928101001⟩
MATEC Web of Conferences, Vol 281, p 01001 (2019)
1st International Conference of Engineering Risk (INCER 2019)
1st International Conference of Engineering Risk (INCER 2019), Apr 2019, Beyrouth, Lebanon. pp.01001, ⟨10.1051/matecconf/201928101001⟩
MATEC Web of Conferences, Vol 281, p 01001 (2019)
In this work, a two-dimensional (2D) Lithium Niobate (LiNbO3) 36°Y-cut micro-transducers (μTs) matrix design is presented. Two main steps define the fabrication process: electrode deposition and photolithography. These steps are preceded by the opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43a6b785b8b197709e794b52ef8e1238
https://uphf.hal.science/hal-03594232/file/matecconf_incer2019_01001.pdf
https://uphf.hal.science/hal-03594232/file/matecconf_incer2019_01001.pdf
