Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hal Massie"'
Publikováno v:
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.
The impact of the shield resistance (Rsh) on the waveform ringing and system efficiency is assessed in this work for 30V trench power FETs with shielded-gate (TP-FETs). Two different approaches, named distributed and local Rsh, are extensively invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e7d4b4e6ff27dc768a9873dfafb908
https://doi.org/10.1109/apec.2014.6803300
https://doi.org/10.1109/apec.2014.6803300
Publikováno v:
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
The gate bouncing of the Shield-Plate FETs (SP-FETs) in synchronous buck converters is investigated in this work for the first time. A comparative analysis between a 30V SP-FET and a 30V TP-FET (Trench Power MOSFET) working as a synchronous switch is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c50d1ea00049eb87e0e260d0e7b28b0d
https://doi.org/10.1109/apec.2013.6520629
https://doi.org/10.1109/apec.2013.6520629
Autor:
Filip Bauwens, L. Golonka, F. De Pestel, Jaume Roig, Nick Martens, Hal Massie, Gary H. Loechelt, S. Mouhoubi
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
The power losses in System-in-Package (SiP) 12V-input DC/DC buck converters with advanced 30V Shield-Plate FETs (SP-FETs) are assessed by experiment and simulation with special interest in the body-diode contribution. Unlike previous work, rise/fall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2167f1b0b1961e120442fae5b55f7c
https://doi.org/10.1109/ispsd.2012.6229080
https://doi.org/10.1109/ispsd.2012.6229080
Autor:
Hal Massie, Nick Martens, Laurence Golonka, Jaume Roig, Eddy De Backer, Charles Hoggatt, Gordy Grivna, S. Mouhoubi, Tony Colpaert, Freddy De Pestel, Peter Coppens, Gary H. Loechelt, Filip Bauwens
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A novel silicon device architecture for DC-DC power conversion is reported. Efficient switching at high frequencies (1–5 MHz) is achieved by simultaneously reducing gate charge, reverse capacitance, and gate resistance while still maintaining good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc3ca2a9c7c4a0568d8af95f0c8170f
https://doi.org/10.1109/ispsd.2012.6229029
https://doi.org/10.1109/ispsd.2012.6229029