Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hal M. Banbrook"'
Publikováno v:
Journal of Vacuum Science & Technology A. 37:050903
Atomic layer deposition (ALD) aluminum oxide (Al2O3) films have been deposited using trimethyl aluminum (TMA) and H2O, and using TMA and H2O with O3 as precursors, and were characterized and evaluated as a metal-insulator-metal (MIM) capacitor dielec
Publikováno v:
Microelectronics Reliability. 52:2870-2874
Low cost processes, in both GaAs and Silicon, often use non-planar interconnect metals. While very efficient in simplifying processes, seam (more commonly called “crack”) formation due to inter-level dielectric topologies can (1) cause significan
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper presents an investigation of the safe-operating-area boundary of bipolar cascode amplifiers in GaAs and SiGe technologies. A simple relation is derived to predict the instability onset due to electrothermal and avalanche effects. Circuit s
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Adaptive Digital Predistortion (DPD) is applied to a spec-compliant class-AB GaAs HBT PA module for WCDMA handsets. It is shown that, by using a re-optimized load line, the efficiency can be increased from 37.5% to 47% at nominal 28.5 dBm output powe