Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hal Kusunose"'
Publikováno v:
Microelectronic Engineering. 21:19-24
With shrinking design rules, the DOF becomes a major concern in lithographical processes. Several methods to improve the DOF are proposed already, each with its advantages and drawbacks. In this work, a new approach to increase the DOF on topographic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4960826e15c6ee12c37bf7c928b37c
https://doi.org/10.1016/0167-9317(93)90018-z
https://doi.org/10.1016/0167-9317(93)90018-z
Autor:
Tomoya Tamura, Seh-Jin Park, Guojing Zhang, Yuta Sato, Kazunori Omata, Hal Kusunose, Andy Ma, Ted Liang
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d330c7053d011448a51c4e32268c36f7
https://doi.org/10.1117/12.824259
https://doi.org/10.1117/12.824259
Autor:
Hal Kusunose, Osamu Sato, Naoki Awamura, Hiroto Nozawa, Koji Miyazaki, Kiwamu Takehisa, Takayuki Ishida, Hideo Takizawa, Satoru Kato
Publikováno v:
SPIE Proceedings.
A new direct Phase-shift/Transmittance measurement tool "MPM193EX" has been developed to respond to the growing demand for higher precision measurements of finer patterns in ArF Lithography. Specifications of MPM193EX are listed below along with corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db17e19e66853e7408ebbb717889bfd
https://doi.org/10.1117/12.824318
https://doi.org/10.1117/12.824318
Autor:
Anwei Jia, Tomoya Tamura, Patrick A. Kearney, Wonil Cho, Chan-Uk Jeon, Hal Kusunose, Eric M. Gullikson, Atsushi Tajima
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) mask blanks must be free of printable defects. The SEMATECH Mask Blank Development Center (MBDC) is focused on driving down the defect density of EUVL mask blanks by providing a collaborative environment for EUV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7afb1c6ecb79926ee691d24da80d13c3
https://doi.org/10.1117/12.712990
https://doi.org/10.1117/12.712990
Autor:
Hal Kusunose
Publikováno v:
Handbook of Photomask Manufacturing Technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69acb2027276dc2be9ec7e832ccd40cd
https://doi.org/10.1201/9781420028782.ch26
https://doi.org/10.1201/9781420028782.ch26
Publikováno v:
SPIE Proceedings.
Direct phase-shift measurement is one of the key technologies to realize Phase-Shift-Mask (PSM) application. Most mask makers are developing practical PSMs for 157nm lithography. Final tuning of the optical parameters and quality assurance of them re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb40afa3c24dd7bcb769c6257b00934
https://doi.org/10.1117/12.518033
https://doi.org/10.1117/12.518033
Publikováno v:
SPIE Proceedings.
One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f80343485cfe11c7e07949f372aadc
https://doi.org/10.1117/12.518388
https://doi.org/10.1117/12.518388
Autor:
Hal Kusunose, Masato Fujinaga, Hiroaki Morimoto, Kurt G. Ronse, Kazuya Kamon, Maaike Op de Beeck
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2468
It is well‐known that many improvements concerning resolution and focus latitude can be obtained by the use of phase‐shifting masks. Different phase‐shifting mask designs are proposed already, and one of the most suitable designs for periodical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::067bb7ab4ac979cbcb91f1ad6cf18f9a
https://doi.org/10.1116/1.586041
https://doi.org/10.1116/1.586041