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pro vyhledávání: '"Haky, Andrew"'
Autor:
Haky Andrew, Vasanelli Angela, Pantzas Konstantinos, Todorov Yanko, Beaudoin Grégoire, Patriarche Gilles, Sagnes Isabelle, Sirtori Carlo
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1851-1857 (2024)
The volume plasmon modes of a confined electron gas are engineered in a step-like semiconductor potential, which induces the formation of adjacent regions of different charge density. Each region supports spatially localized collective modes. Adjacen
Externí odkaz:
https://doaj.org/article/dd28191b62bf4316933acc582b532ea9
Autor:
Vasanelli, Angela, Todorov, Yanko, Dailly, Baptiste, Cosme, Sébastien, Gacemi, Djamal, Haky, Andrew, Sagnes, Isabelle, Sirtori, Carlo
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in doped layers o
Externí odkaz:
http://arxiv.org/abs/2007.12403
Autor:
Vasanelli, Angela, Huppert, Simon, Haky, Andrew, Laurent, Thibault, Todorov, Yanko, Sirtori, Carlo
Publikováno v:
Phys. Rev. Lett. 125, 187401 (2020)
We investigate the frontier between classical and quantum plasmonics in highly doped semiconductor layers. The choice of a semiconductor platform instead of metals for our study permits an accurate description of the quantum nature of the electrons c
Externí odkaz:
http://arxiv.org/abs/2003.01543
Autor:
Vasanelli Angela, Todorov Yanko, Dailly Baptiste, Cosme Sébastien, Gacemi Djamal, Haky Andrew, Sagnes Isabelle, Sirtori Carlo
Publikováno v:
Nanophotonics, Vol 10, Iss 1, Pp 607-615 (2020)
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5–15 μm wavelength region set by the doping level and the effective mass. Here, we demonstrate that volume plasmons can form in doped laye
Externí odkaz:
https://doaj.org/article/3855564c3445434ba5c8898d91311714
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