Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Hakim Tahi"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2181-2188
In part I, we have proposed a new capacitance–voltage technique ${C}$ ( ${V}$ ), which is simultaneously based on external ac magnetic field for surface potential modulation and on dc voltage to sweep the gate voltage. In part II, we describe the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe36c7e305eb4c419d6eb4aca15cb637
https://doi.org/10.1109/ted.2021.3067634
https://doi.org/10.1109/ted.2021.3067634
Publikováno v:
IEEE Transactions on Electron Devices. 68:2173-2180
In this article, we report a new capacitance–voltage technique ${C}$ ( ${V}$ ) to investigate the interface proprieties of MOS devices. This technique is based on surface potential modulation using time varying (ac) magnetic field. It is experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::109ceace18a9fa068c0e5a46e4f6f052
https://doi.org/10.1109/ted.2021.3067587
https://doi.org/10.1109/ted.2021.3067587
Publikováno v:
International Journal of Electronics Letters. 8:355-369
In this paper, we investigate the negative bias temperature instability (NBTI) on conventional P-type metal-oxide-semiconductor field effect transistors (PMOSFET) using on-fly bulk trap technique (...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881d741e1c0b62ae4a1ab9e69358b3ef
https://doi.org/10.1080/21681724.2019.1625961
https://doi.org/10.1080/21681724.2019.1625961
Autor:
Hakim Tahi, Cherifa Tahanout, Boualem Djezzar, Sidi Mohammed Merah, Mohamed Boubaaya, Bacharia Nadji, Nadia Saoula
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:99-105
In this paper, we report an experimental evidence of the impact of applied a low magnetic field ( ${B ) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor. We show that both int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f268fa5f1def772811c8fc7db8ee2656
https://doi.org/10.1109/tdmr.2017.2666260
https://doi.org/10.1109/tdmr.2017.2666260
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:290-297
In this paper, an experimental analysis of the impact of dynamic negative bias temperature instability (NBTI) stress on the CMOS inverter dc response and temporal performance is presented. We analyzed the circuit behavior subjected to ac NBTI in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e74616dc26a846acd8a99e4d150c04
https://doi.org/10.1109/tdmr.2016.2578040
https://doi.org/10.1109/tdmr.2016.2578040
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Mohamed Kechouane, Amel Chenouf, Boumediene Zatout, Hakim Tahi
Publikováno v:
Solid-State Electronics. 121:34-40
We have experimentally analyzed negative bias temperature instability (NBTI) stress/recovery cycle on n-channel metal oxide semiconductor field effect transistors (n-MOSFET’s). Data obtained by current–voltage (I–V) and charge pumping (CP) tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801711b4ddfea58777bb4fa61295ec97
https://doi.org/10.1016/j.sse.2016.04.001
https://doi.org/10.1016/j.sse.2016.04.001
Autor:
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Dhiaelhak Messaoud, Mohamed Boubaaya, Boumediene Zatout, Hakima Timlelt, Amel Chenouf, Hakim Tahi
Publikováno v:
Microelectronics Reliability. 110:113703
Conducting negative bias temperature instability (NBTI) stress/recovery experiments on n-type metal-oxide-semiconductor-field-effect-transistors (n-MOSFETs), we have been able to reveal the existence of turn around phenomenon during stress phase. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca28dbaa3e7a60eff26a65a05899ce6
https://doi.org/10.1016/j.microrel.2020.113703
https://doi.org/10.1016/j.microrel.2020.113703
Autor:
S. Lafane, Mohamed El-Amine Benamar, Ahdelkader Hassein-Bey, Asmaa Leila Sabeha Hassein-Bey, Hakim Tahi, S. Abdelli-Messaci
Publikováno v:
2018 IEEE International Conference on Semiconductor Electronics (ICSE).
Vanadium dioxide (VO 2 ) exhibits a metal-insulator transition (MIT) near 68°C with a unique sharp resistivity change. Below this temperature, it behaves as a semiconductor with a high electrical resistivity, above it the material behaves as a metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d770fe171092d673acf42364688226d
https://doi.org/10.1109/smelec.2018.8481217
https://doi.org/10.1109/smelec.2018.8481217
Publikováno v:
IEEE Transactions on Electron Devices. 62:3285-3290
In this paper, we model the geometric component in a charge pumping (CP) technique of polycrystalline silicon thin-film transistors (poly-Si TFTs). This model is based on both remaining carrier types when the device transits from accumulation to inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d47410aa8e807c9260164bf85db7e75
https://doi.org/10.1109/ted.2015.2466672
https://doi.org/10.1109/ted.2015.2466672
Publikováno v:
Microelectronics Reliability. 55:1460-1463
This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::496c924af111e063974e6848870421b3
https://doi.org/10.1016/j.microrel.2015.06.137
https://doi.org/10.1016/j.microrel.2015.06.137