Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Hakho Hong"'
Autor:
Hakho Hong
Publikováno v:
Journal of Differential Equations. 314:518-573
Autor:
Jinsung Kim, Hakho Hong
Publikováno v:
Mathematical Methods in the Applied Sciences. 44:11102-11123
Autor:
Gimyong Hong, Hakho Hong
Publikováno v:
Applications of Mathematics. 67:21-47
We are concerned with a transmission problem for the Kirchhoff plate equation where one small part of the domain is made of a viscoelastic material with the Kelvin-Voigt constitutive relation. We obtain the logarithmic stabilization result (explicit
Autor:
Gimyong Hong, Hakho Hong
Publikováno v:
Journal of Evolution Equations. 21:2239-2264
In this paper, we consider the stabilization for the Kirchhoff plate and equations connected by transmission conditions. We show that the energy of the transmission system is stable with logarithmic decay rate when feedback control acts on the small
Publikováno v:
Communications in Mathematical Sciences. 19:1233-1246
This paper is concerned with the large-time behavior of solutions to the outflow problem of full compressible Navier-Stokes equations in the half line. This is one of the series of papers by the authors on the stability of nonlinear waves to the outf
Publikováno v:
Communications in Mathematical Sciences. 19:2195-2215
Autor:
Hakho Hong
Publikováno v:
Acta Mathematica Scientia. 41:319-336
In this paper, we consider an inflow problem for the non-isentropic Navier-Stokes-Poisson system in a half line (0, ∞). For the general gas including ideal polytropic gas, we first give some results for the existence of the stationary solution with
Publikováno v:
Mathematical Methods in the Applied Sciences. 43:5073-5096
Publikováno v:
Communications in Mathematical Sciences. 18:1661-1684
Autor:
Hakho Hong, Sungjin Ra
Publikováno v:
Zeitschrift für angewandte Mathematik und Physik. 72
In this paper, we are concerned with the large-time behavior of the solutions in the full quantum hydrodynamic model, which can be used to analyze the thermal and quantum influences on the transport of carriers (electrons or holes) in semiconductor d