Zobrazeno 1 - 10
of 662
pro vyhledávání: '"Hajime Okumura"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 470-475 (2019)
Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate- and surface-normal-scaling functions were d
Externí odkaz:
https://doaj.org/article/8bd854397d19496187bdf9bea1662c30
Autor:
Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura
Publikováno v:
Materials, Vol 7, Iss 10, Pp 7010-7021 (2014)
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed t
Externí odkaz:
https://doaj.org/article/bd553eef65eb41988614e749e5ab43c4
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015207-015207-8 (2016)
Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spec
Externí odkaz:
https://doaj.org/article/8d460a108b72445e99bb918ea335f9e8
Publikováno v:
AIP Advances, Vol 5, Iss 1, Pp 017109-017109-11 (2015)
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogeni
Externí odkaz:
https://doaj.org/article/efc2a0a51f4f4c1bafeca4a4fc1c0653
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Autor:
KAZUYUKI SOGAWA, AZUMI FUJINAGA, HAJIME OKUMURA, MAKIKO KIYOSUKE, SYOTA MURATA, KOJI KUSABA, KOHEI UECHI, KAZUKI HORIUCHI, KAZUNARI YASUDA, MASAMI MURAKAMI, TOMOHIRO NAKAYAMA
Publikováno v:
Journal of Microorganism Control; 2024, Vol. 29 Issue 1, p49-53, 5p
Autor:
KAZUYUKI SOGAWA, KOHEI UECHI, MAKIKO KIYOSUKE, SYOTA MURATA, KOJI KUSABA, YUJI SAEKI, KAZUKI HORIUCHI, KAZUNARI YASUDA, HAJIME OKUMURA, AZUMI FUJINAGA, MASAMI MURAKAMI
Publikováno v:
Biocontrol science. 27(3)
Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF MS) was approved for medical use in 2011 and is currently used as a rapid, accurate and lowcost technique for bacterial identification. External quality control f
Autor:
Hajime Okumura, Kazuki Horiuchi, Kazuyuki Sogawa, Makiko Kiyosuke, Azumi Fujinaga, Kohei Uechi, Sachie Sekiguchi, Kanako Hattori, Koji Kusaba, Yuji Saeki, Kazunari Yasuda, Tomohiro Nakayama, Tomohisa Watari, Masami Murakami, Syota Murata
Publikováno v:
Biocontrol Science. 26:99-104
Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF MS) was approved for medical use in 2011, and is currently used as a rapid, accurate and low-cost technique for bacterial identification. Microbiological testing
Autor:
Takeshi Mitani, Tomohisa Kato, Naohiro Sugiyama, Hajime Okumura, Isaho Kamata, Hidekazu Tsuchida
Publikováno v:
Materials Science Forum. 1004:427-432
The scratch damage that caused the generation of double Shockley stacking faults (DSFs) in heavily nitrogen doped 4H-SiC crystal was investigated quantitatively. Scratch tests were carried out on 4H-SiC substrates with a nitrogen concentration of 2.6
Autor:
Hideharu Matsuura, Hajime Okumura, Rinya Nishihata, Kazutoshi Kojima, Kota Takano, Tatsuya Imamura, Sadafumi Yoshida, Tomohisa Kato, Atsuki Hidaka, Akinobu Takeshita, Shi Yang Ji, Kazuma Eto, Kohei Ogawa, Kazuya Okuda
Publikováno v:
Materials Science Forum. 1004:215-223
We investigate the temperature dependence of the resistivity and Hall coefficient for heavily Al-doped p-type 4H-SiC epilayers with Al concentrations (C_Al) of > 2E19 cm^−3, which are substrates for the collectors of insulated-gate bipolar transist