Výsledky vyhledávání - "Hajime KIMURA"

Akademický článek

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Autor: Takeya Hirose, Yuki Okamoto, Yusuke Komura, Toshiki Mizuguchi, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Hiroki Inoue, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Hajime Kimura, Takanori Matsuzaki, Makoto Ikeda, Shunpei Yamazaki

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 12, Pp 236-242 (2024)

We present a three-dimensional (3D) DRAM prototype, which is formed using oxide semiconductor FETs (OSFETs) monolithically stacked on a Si CMOS. The OSFETs are composed of a one-layer planar FET and two-layer vertical FETs (VFETs). The 1T1C memory ce

Externí odkaz: https://doaj.org/article/936c403535f14b428f2a5a71bfb5a0ef

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Akademický článek

A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Autor: Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda, Noriko Matsumoto, Tatsuki Koshida, Satoru Ohshita, Hiromi Sawai, Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa, Takako Seki, Ryunosuke Honda, Haruyuki Baba, Daigo Shimada, Hajime Kimura, Ryo Tokumaru, Tomoaki Atsumi, Kiyoshi Kato, Shunpei Yamazaki

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 495-502 (2019)

We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a

Externí odkaz: https://doaj.org/article/3b4a197508f54d028b2b33ddeb7df132

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