Výsledky vyhledávání - "Hajime Chiba"

Akademický článek

Effect of interfacial structure on peel strength between Cu and AlN bonded with a Mg–Ti co-deposited film

Autor: Nobuyuki Terasaki, Naochika Kon, Hajime Chiba, Touyou Ohashi, Tohru Sekino

Publikováno v: Discover Materials, Vol 3, Iss 1, Pp 1-12 (2023)

Abstract Eliminating electrochemical migration of Ag is effective for improving the long-term reliability of power modules for high-voltage applications. In this work, a Cu plate was bonded onto an AlN substrate via Mg–Ti co-deposited films with th

Externí odkaz: https://doaj.org/article/425a0636eb3f478783255f27051dc964

Zobrazit plný text záznamu

Akademický článek

Interfacial structure between TiN sintered ceramics with and without an Fe-containing grain boundary phase and Ag–Cu eutectic brazing filler material

Autor: Nobuyuki Terasaki, Naochika Kon, Hajime Chiba, Touyou Ohashi, Tohru Sekino

Publikováno v: SN Applied Sciences, Vol 5, Iss 1, Pp 1-11 (2022)

Abstract To focus on the interfacial reaction between the Ag–Cu alloy layer and TiN in active metal brazing, the Ag–Cu brazed interfacial structures between Cu and two types of TiN sintered ceramics fabricated by different methods were examined.

Externí odkaz: https://doaj.org/article/849d780a12244795b2e25b9d0cbea165

Zobrazit plný text záznamu

Interfacial structures between aluminum nitride and Cu–P–Sn–Ni brazing alloy with Ti film

Autor: Naochika Kon, Kevin M. Knowles, Nobuyuki Terasaki, Yoshiyuki Nagatomo, Hajime Chiba, Touyou Ohashi, Yoshirou Kuromitsu

Control of Ag electro chemical migration is crucial for long–term reliability of electrical components in high–voltage applications. In this work, Cu was bonded onto an AlN substrate at temperatures between 650 °C and 950 °C for 1 h using a Ag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6cebc1711e46a7727fa1276b9718855

Zobrazit plný text záznamu

Growth mechanism of TiN reaction layers produced on AlN via active metal bonding

Autor: Nobuyuki Terasaki, Moe Sakaguchi, Hajime Chiba, Touyou Ohashi, Yoshiyuki Nagatomo, Yoshirou Kuromitsu, Tohru Sekino, Kevin M. Knowles

Interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on c-plane sapphire and a Ti–containing metal brazing or sintering layer using Ag–Cu–TiH2, Ag–TiH2 and Cu–TiH2 pastes ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a0a770c428b41e6578c4b8b370443cf
https://www.repository.cam.ac.uk/handle/1810/338832

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání