Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Haiping Shang"'
Publikováno v:
Sensors, Vol 21, Iss 2, p 379 (2021)
The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate wit
Externí odkaz:
https://doaj.org/article/196fad1cf91a44148f1cd795d9fe3f46
Publikováno v:
Materials, Vol 14, Iss 1, p 128 (2020)
High hardness and corrosion resistance of SiC (silicon carbide) bulk materials have always been a difficult problem in the processing of an all-SiC piezoresistive pressure sensor. In this work, we demonstrated a SiC sealing cavity structure utilizing
Externí odkaz:
https://doaj.org/article/0615b2418cb6498883503bf69572f6d7
Publikováno v:
Sensors, Vol 20, Iss 16, p 4419 (2020)
A pressure sensor in the range of 0–120 MPa with a square diaphragm was designed and fabricated, which was isolated by the oil-filled package. The nonlinearity of the device without circuit compensation is better than 0.4%, and the accuracy is 0.43
Externí odkaz:
https://doaj.org/article/1d8c82a75cea46aabf67e99e837c89eb
Autor:
Fengwen Mu, Yang Xu, Seongbin Shin, Yinghui Wang, Hengyu Xu, Haiping Shang, Yechao Sun, Lei Yue, Tatsurou Tsuyuki, Tadatomo Suga, Weibing Wang, Dapeng Chen
Publikováno v:
Micromachines, Vol 10, Iss 10, p 635 (2019)
Wafer bonding of a silicon carbide (SiC) diaphragm to a patterned SiC substrate coated with aluminum nitride (AlN) film as an insulating layer is a promising choice to fabricate an all-SiC capacitive pressure sensor. To demonstrate the bonding feasib
Externí odkaz:
https://doaj.org/article/0a7dfd84aeaf41768dc42a986432b67d
Publikováno v:
IEEE Sensors Journal. 22:6435-6441
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec81c0f1f6018099cc4d439d8de86e6a
https://doi.org/10.1109/jsen.2022.3153630
https://doi.org/10.1109/jsen.2022.3153630
Publikováno v:
IEEE Sensors Journal. 22:3994-4003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30297177e825fba46670571369edce9
https://doi.org/10.1109/jsen.2022.3144467
https://doi.org/10.1109/jsen.2022.3144467
Publikováno v:
IEEE Sensors Journal. 21:27308-27314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb98f2fb76eb1b0bc86800dc6290faf9
https://doi.org/10.1109/jsen.2021.3121882
https://doi.org/10.1109/jsen.2021.3121882
Publikováno v:
Silicon. 14:5445-5451
Temperature drift restricts the measurement accuracy and application fields of high temperature pressure sensors. In this work, a theoretical model of temperature characteristics in SiC piezoresistive pressure sensor was developed to analyze the infl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee95cabde120c656eebb6fabb1320781
https://doi.org/10.1007/s12633-021-01330-x
https://doi.org/10.1007/s12633-021-01330-x
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:17637-17644
In this paper, we adopt Ni-based ohmic contacts of n-type 4H-SiC (silicon carbide), basing its applications on SiC pressure sensors, to explore the manufacturability and high temperature reliability problems of SiC metallization process, including th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f413f6ef19a64c65b697a46b2ae9a9
https://doi.org/10.1007/s10854-021-06297-4
https://doi.org/10.1007/s10854-021-06297-4
Performance optimization of SiC piezoresistive pressure sensor through suitable piezoresistor design
Publikováno v:
Microsystem Technologies. 27:3083-3093
Silicon carbide is considered as a more suitable material for piezoresistive pressure sensors in a high-temperature environment due to its excellent characteristics. In this paper, fundamental research on the structural design of SiC piezoresistive p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b19734884c6df24a06ac4b8b4f098e
https://doi.org/10.1007/s00542-020-05175-z
https://doi.org/10.1007/s00542-020-05175-z