Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Haila M. Aldosari"'
Autor:
Sumayya M. Ansari, Inas Taha, Xiaoping Han, Dalaver H. Anjum, Baker Mohammad, Noureddine Amrane, Maamar Benkraouda, Haila M. Aldosari
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 2538-2549 (2023)
This study investigates the influence of molybdenum (Mo) doping on the local atomic structure, morphology, and electrical properties of amorphous germanium telluride (GeTe) thin films. Structural and morphological studies show that Mo-doping inhibits
Externí odkaz:
https://doaj.org/article/5f77bc2340a6460ba17285d1c20537c3
Autor:
Sumayya M. Ansari, Sueda Saylan, Inas Taha, Dalaver H. Anjum, Baker Mohammad, Haila M. Aldosari
Publikováno v:
Journal of Materials Research and Technology, Vol 18, Iss , Pp 2631-2640 (2022)
Temperature-dependent capacitance–voltage and conductance–voltage measurements of 200-nm-thick germanium telluride (GeTe) thin films deposited via direct current magnetron sputtering were investigated. Measurements were performed across a tempera
Externí odkaz:
https://doaj.org/article/f7616e6e5323477bb9d49cd8d8d51fec
Autor:
Alam Saj, Shaikha Alketbi, Sumayya M. Ansari, Dalaver H. Anjum, Baker Mohammad, Haila M. Aldosari
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 763 (2022)
This study demonstrated the deposition of size-controlled gold (Au) nanoclusters via direct-current magnetron sputtering and inert gas condensation techniques. The impact of different source parameters, namely, sputtering discharge power, inert gas f
Externí odkaz:
https://doaj.org/article/f2f1d03803cc4df9895efd31de55863b
Autor:
Yawar Abbas, Sumayya M. Ansari, Inas Taha, Heba Abunahla, Muhammad Umair Khan, Moh'd Rezeq, Haila M. Aldosari, Baker Mohammad
Publikováno v:
Advanced Functional Materials
Recently, phase change chalcogenides, such as monochalcogenides, are reported as switching materials for conduction-bridge-based memristors. However, the switching mechanism focused on the formation and rupture of an Ag filament during the SET and RE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa3f3990130363d5919fffad69fdcba
https://doi.org/10.1002/adfm.202214615
https://doi.org/10.1002/adfm.202214615
Autor:
Baker Mohammad, Florent Ravaux, Maguy Abi Jaoude, Haila M. Aldosari, Khaled Humood, Sueda Saylan
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the impor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f10acd23507dde48b03165b31d0cf16e
http://link.springer.com/article/10.1038/s41598-020-76333-6
http://link.springer.com/article/10.1038/s41598-020-76333-6
Effect of vacuum annealing on structural and electrical properties of germanium telluride thin films
Autor:
Sumayya M. Ansari, Baker Mohammad, Dalaver H. Anjum, Haila M. Aldosari, Ashraf Ali, Basem Ehab
Publikováno v:
Materials Research Bulletin. 146:111575
This study investigates the effects of vacuum annealing on the structural and electrical properties of germanium telluride thin films. To this end, GeTe thin films were prepared via DC magnetron sputtering in three sets—as-prepared at 25 °C, as-pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34daabbb80a5c6c1975ba6d990bb666f
https://doi.org/10.1016/j.materresbull.2021.111575
https://doi.org/10.1016/j.materresbull.2021.111575
Autor:
Shih Ying Yu, Suzanne E. Mohney, Haila M. Aldosari, Katherine C. Kragh-Buetow, Kayla A. Cooley
Publikováno v:
Thin Solid Films. 621:145-150
Low-resistance Ohmic contacts for phase change materials (PCMs) such as GeTe are required for devices such as radio frequency switches. The contacts must also exhibit good thermal stability since the PCM is switched by heating. In this work, Au Ohmic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faf10d8f8c5a75587b8ff872357a6a11
https://doi.org/10.1016/j.tsf.2016.11.038
https://doi.org/10.1016/j.tsf.2016.11.038
Autor:
Zelong Ding, Shih Ying Yu, Suzanne E. Mohney, Haila M. Aldosari, Hamed Simchi, Kayla A. Cooley
Publikováno v:
ACS Applied Materials & Interfaces. 8:34802-34809
Surfaces of polycrystalline α-GeTe films were studied by X-ray photoelectron spectroscopy (XPS) after different treatments in an effort to understand the effect of premetallization surface treatments on the resistance of Ni-based contacts to GeTe. U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bcdcc902ced8ed910f6970f5b6733a8
https://doi.org/10.1021/acsami.6b07412
https://doi.org/10.1021/acsami.6b07412
Publikováno v:
Journal of Vacuum Science & Technology A. 38:067001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dcc7843a535261a6610ec8c4eda9dcf
https://doi.org/10.1116/6.0000712
https://doi.org/10.1116/6.0000712
Publikováno v:
Journal of Vacuum Science & Technology A. 38:050805
Devices based on the unique phase transitions of phase change materials (PCMs) like GeTe and Ge2Sb2Te5 (GST) require low-resistance and thermally stable Ohmic contacts. This work reviews the literature on electrical contacts to GeTe, GST, GeCu2Te3 (G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806794aec7437f1abbe3af0b06f3fdf3
https://doi.org/10.1116/6.0000321
https://doi.org/10.1116/6.0000321