Noise-based approximation to thermal spin-injection in Fe/GaAs

Autor: Wagner, T, Haigh, JA, Olejník, K, Irvine, AC, Novák, V, Wunderlich, J

© 2017 Author(s). We analyze the prospects for thermal spin-injection from iron into gallium arsenide via the application of electrical noise. By estimating the applied effective temperature-equivalent gradients, we characterize the magnitude of any

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______109::eee09f568e74c49530211da789e9a750
https://www.repository.cam.ac.uk/handle/1810/295192

Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification.

Autor: Schaal S; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom., Ahmed I; Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom., Haigh JA; Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom., Hutin L; CEA, LETI, Minatec Campus, F-38054 Grenoble, France., Bertrand B; CEA, LETI, Minatec Campus, F-38054 Grenoble, France., Barraud S; CEA, LETI, Minatec Campus, F-38054 Grenoble, France., Vinet M; CEA, LETI, Minatec Campus, F-38054 Grenoble, France., Lee CM; Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom., Stelmashenko N; Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom., Robinson JWA; Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom., Qiu JY; Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA., Hacohen-Gourgy S; Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA., Siddiqi I; Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA., Gonzalez-Zalba MF; Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom., Morton JJL; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.; Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom.

Publikováno v: Physical review letters [Phys Rev Lett] 2020 Feb 14; Vol. 124 (6), pp. 067701.

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Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor.

Autor: Ramsay AJ; Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom., Roy PE; Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom., Haigh JA; Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom., Otxoa RM; Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom., Irvine AC; The Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom., Janda T; Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic., Campion RP; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Gallagher BL; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Wunderlich J; Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom and Institute of Physics ASCR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic.

Publikováno v: Physical review letters [Phys Rev Lett] 2015 Feb 13; Vol. 114 (6), pp. 067202. Date of Electronic Publication: 2015 Feb 11.