Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Haidi Zhou"'
Publikováno v:
IEEE Transactions on Engineering Management. :1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b84cdec52ded05d4516f27ada15b8cd5
https://doi.org/10.1109/tem.2023.3242766
https://doi.org/10.1109/tem.2023.3242766
Publikováno v:
International Journal of Operations & Production Management.
PurposeThis study examines the firm-level financial consequences caused by supply chain disruptions during COVID-19 and explores how firms' supply chain diversification strategies, including diversified suppliers, customers and products, moderate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7a657d96c5e6644fedcdeeb95f230b
https://doi.org/10.1108/ijopm-09-2022-0567
https://doi.org/10.1108/ijopm-09-2022-0567
Publikováno v:
International Journal of Physical Distribution & Logistics Management.
PurposeThe authors investigate how logistics digitalization affects two types of third-party logistics (3PL) performance: financial performance and service performance. In particular, the authors explore the mediating role of customer collaboration b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58c83ce50bcd20a47af39d412fa9151
https://doi.org/10.1108/ijpdlm-12-2021-0532
https://doi.org/10.1108/ijpdlm-12-2021-0532
Autor:
J. Ocker, Stefan Mueller, R. Hoffmann, Sven Beyer, Johannes Müller, Franz Muller, Haidi Zhou, Thomas Mikolajick, Stefan Dunkel, Konrad Seidel, Evelyn T. Breyer, Stefan Slesazeck, Dominik Kleimaier, Tarek Ali, Maximilian Lederer, Martin Trentzsch, Halid Mulaosmanovic
Publikováno v:
IEEE Transactions on Electron Devices. 67:3466-3471
Long data retention is a critical requirement for many of the potential applications of HfO2-based ferroelectric field-effect transistors (FeFETs). However, methods for its rapid assessment are still missing. In this article, we report a detailed inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51b9fd33e154fd384f95f711f86f26cc
https://doi.org/10.1109/ted.2020.3004033
https://doi.org/10.1109/ted.2020.3004033
Publikováno v:
Industrial Management & Data Systems. 120:863-882
PurposeThe purpose of this study was to examine how firms' corporate social responsibility (CSR) strategies affect their innovation performance via two mediating variables, employee involvement and supplier collaboration, and compare how this mechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2d0a10ea81a22d2d1da3319c9f37cc
https://doi.org/10.1108/imds-09-2019-0493
https://doi.org/10.1108/imds-09-2019-0493
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230256da4011007b04be8949869cf4c9
https://doi.org/10.2139/ssrn.4086572
https://doi.org/10.2139/ssrn.4086572
Autor:
Haidi Zhou, Qiang Wang
Publikováno v:
Supply Chain Risk and Innovation Management in “The Next Normal” ISBN: 9789811914638
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658a0a55d003c02661f3fda629c24cdb
https://doi.org/10.1007/978-981-19-1464-5_7
https://doi.org/10.1007/978-981-19-1464-5_7
Autor:
Johannes Müller, Antoine Benoist, Konrad Seidel, Dirk Utess, Andreas Hellmich, Stefan Müller, Menno Mennenga, Ali Pourkeramati, Thomas Kampfe, Halid Mulaosmanovic, Martin Trentzsch, Jan Paul, Thomas Mikolajick, Haidi Zhou, Maximilian Lederer, M. Schuster, Fabio Tassan, J. Ocker, M. Noack, Evelyn T. Breyer, Tarek Ali, Sven Beyer, Dominik Kleimaier, John Pellerin, Stefan Slesazeck, Stefan Dunkel, R. Hoffmann, Franz Muller
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
With the discovery of ferroelectricity in HfO 2 based thin films and the co-integration of ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS platforms, the FeFET has emerged from a theoretical dream to an appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad8e14efc2882797806718d2a0b6aeb
https://doi.org/10.1109/imw48823.2020.9108150
https://doi.org/10.1109/imw48823.2020.9108150
Autor:
Stefan Müller, Stefan Dunkel, Menno Mennenga, Sven Beyer, Thomas Mikolajick, J. Ocker, M. Noack, Haidi Zhou, Martin Trentzsch
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
In this paper, recent advances on the development of Hafnium oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs) are shown with respect to its memory window, trapping behavior and endurance characteristics. Although this novel ferroele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aceedbadba0e323d1b65b243c19fdf7c
https://doi.org/10.1109/imw48823.2020.9108131
https://doi.org/10.1109/imw48823.2020.9108131
Publikováno v:
Proceedings of the 2017 3rd International Conference on Economics, Social Science, Arts, Education and Management Engineering (ESSAEME 2017).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c9722cc577636c4544a95240041b84
https://doi.org/10.2991/essaeme-17.2017.258
https://doi.org/10.2991/essaeme-17.2017.258