Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Haico Victor Kok"'
Autor:
Young Ha Kim, Haico Victor Kok, Byeong Soo Lee, Jeongjin Lee, Christopher J. Mason, Richard Droste, Young Seog Kang, Igor Matheus Petronella Aarts, Roelof de Graaf, Wim de Boeij, Hyunwoo Hwang, Bart Dinand Paarhuis, Jeong Heung Kong, Stefan Weichselbaum
Publikováno v:
SPIE Proceedings.
Overlay is one of the key factors which enables optical lithography extension to 1X node DRAM manufacturing. It is natural that accurate wafer alignment is a prerequisite for good device overlay. However, alignment failures or misalignments are commo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee80f8c6c80425c6ff7fd047aa3ad941
https://doi.org/10.1117/12.2220587
https://doi.org/10.1117/12.2220587
Autor:
Wim de Boeij, Par Broman, Marjan Leonardus Catharina Hoofman, Joost Smits, Jan-Jaap Kuit, Matthew McLaren, Roelof de Graaf, Haico Victor Kok, Martijn Leenders, Remi Pieternella, Igor Bouchoms
Publikováno v:
SPIE Proceedings.
In this paper we report on the performance enhancements on the NXT immersion scanner platform to support the immersion lithography roadmap. We particular discuss scanner modules that enable future overlay and focus requirements. Among others we descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a2839e86295ff8aad6eda7f752827
https://doi.org/10.1117/12.2021397
https://doi.org/10.1117/12.2021397
Publikováno v:
SPIE Proceedings.
With the continued shrinks in production structures to 38 nm and below for hyper-NA lithographic tools, there is an opportunity to further optimize these reticle alignment structures to reduce overlay numbers and improve yield. This opportunity is es
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a71c80fbeb1e37558b61e6755933f414
https://doi.org/10.1117/12.864476
https://doi.org/10.1117/12.864476
Autor:
Wim de Boeij, Jo Finders, Carsten Kohler, Jan Mulkens, Mark van de Kerkhof, Tilmann Heil, Haico Victor Kok, Jos de Klerk, Damian Fiolka, Koen van Ingen-Schenau, Geert Swinkels
Publikováno v:
Optical Microlithography XVIII.
The polarization properties of light become more and more important as numerical apertures of the projection lens increase. With unpolarized light the contrast of the image is degraded because of poor interference of the TM component of the light. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c12630648219f841751ebf1991951034
https://doi.org/10.1117/12.599626
https://doi.org/10.1117/12.599626
Autor:
Mark van de Kerkhof, Marianna Silova, Marcel Maurice Hemerik, Haico Victor Kok, Wim de Boeij, Jan Baselmans
Publikováno v:
SPIE Proceedings.
Advanced optical systems for low k1 lithography require accurate characterisation of various imaging parameters to insure that OPC strategies can be maintained. Among these parameters lens aberrations and illumination profiles are the most important
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73852c454beff7db0e4d0f9478fee69a
https://doi.org/10.1117/12.536331
https://doi.org/10.1117/12.536331
Autor:
Wim de Boeij, Mark van de Kerkhof, Haico Victor Kok, Gregg M. Gallatin, Kafai Lai, Daniel Corliss, Jaime D. Morillo, Martin Schriever, Robert H. Fair, Stephanie Bennett
Publikováno v:
SPIE Proceedings.
A new paradigm of lens metrology, which is an on-board in-situ interferometer on a scanner, is evaluated. We called this system as Inline PMI and is based on a shearing type interferometer. Wavefront gradient data is measured and used to reconstruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f6bf940847e2c3c3e1afc8240bf536
https://doi.org/10.1117/12.536550
https://doi.org/10.1117/12.536550
Autor:
Haico Victor Kok
Publikováno v:
The Journal of the Acoustical Society of America. 123:2468
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c291ed91ce9e790712fe0a6e15d9b6b
https://doi.org/10.1121/1.2921173
https://doi.org/10.1121/1.2921173
Autor:
Shawn Lee, Gijs ten Haaf, Henry Megens, Igor Matheus Petronella Aarts, Leendertjan Karssemeijer, Jan Mulkens, Daan Slotboom, Haico Victor Kok, Ralph Brinkhof, Evert Mos, Simon Reinald Huisman, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Manouk Rijpstra, Irina Lyulina, Robert John Socha, Boris Menchtchikov, Stefan Carolus Jacobus Antonius Keij, Wim Tjibbo Tel, Chris de Ruiter, Michael Kubis
Publikováno v:
Optical Microlithography XXXII
Multi-patterning lithography for future technology nodes in logic and memory are driving the allowed on-product overlay error in an DUV and EUV matched machine operation down to values of 2 nm and below. The ASML ORION alignment sensor provides an ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::783d1943d7337abc9346b91e2b12d413
