Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Hai-gui Yang"'
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045027-045027-5 (2019)
The robust designs of broadband extreme ultraviolet multilayers based on the multiobjective genetic algorithm are validated experimentally. In order to reduce the influence of random layer thickness fluctuations on the great deformation of the experi
Externí odkaz:
https://doaj.org/article/f85a3f451ed14fbd91f3435d47f74639
Publikováno v:
Journal of Applied Physics; 11/14/2017, Vol. 122 Issue 18, p1-7, 7p
Autor:
Ning Sui, Jun Kou, Xiaochun Chi, Hai-Gui Yang, Lu Zou, Yinghui Wang, Jiechao Gao, Hanzhuang Zhang, Jinyang Zhu, Xue-cong Li, Qinghui Liu
Publikováno v:
Luminescence. 31:1298-1301
The photoluminescence (PL) characteristics of semiconductor CdSe quantum dots (QDs) aggregated on Cu nanowires (NWs) were studied in detail. The PL relaxation dynamic data show that Cu NWs improve the PL intensity of CdSe QDs by accelerating the emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4316f6406da66b1fb59c0753029d14b
https://doi.org/10.1002/bio.3101
https://doi.org/10.1002/bio.3101
Publikováno v:
Surface Engineering. 32:185-189
As we know, high-quality large-area thick Al films have important applications in echelle gratings. To fabricate them, the deposition angle is one of the most decisive factors. In this study, for the first time we investigate the structural propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb8bec63286bef5f3ba8d612d8d1745
https://doi.org/10.1080/02670844.2015.1104101
https://doi.org/10.1080/02670844.2015.1104101
Autor:
Ning Sui, Hanzhuang Zhang, Jiechao Gao, Ying-Shu Yang, Zhi-Hui Kang, Hai-Gui Yang, Xiaochun Chi, Lianchun Zou, Yinghui Wang
Publikováno v:
Optical Materials. 46:350-354
The photoluminescence (PL) characteristics of CdTe/ZnS quantum dots (QDs) infiltrated in TiO2 inverse opal photonic crystals (PCs) are studied in detail. The PL dynamics of QDs show that the PCs could accelerate the PL relaxation rate of QDs as the P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ada07ec243a75f4a4fde9a89780dc8
https://doi.org/10.1016/j.optmat.2015.04.043
https://doi.org/10.1016/j.optmat.2015.04.043
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045027-045027-5 (2019)
The robust designs of broadband extreme ultraviolet multilayers based on the multiobjective genetic algorithm are validated experimentally. In order to reduce the influence of random layer thickness fluctuations on the great deformation of the experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc1b190a8973c6ca4eeb723ee3f9a009
https://doaj.org/article/f85a3f451ed14fbd91f3435d47f74639
https://doaj.org/article/f85a3f451ed14fbd91f3435d47f74639
Publikováno v:
Key Engineering Materials. 470:79-84
Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9faee52bd940bca30b699aeb6557b1b5
https://doi.org/10.4028/www.scientific.net/kem.470.79
https://doi.org/10.4028/www.scientific.net/kem.470.79
Publikováno v:
SPIE Proceedings.
Silicon with various structural morphologies is widely used for solar cells and other optoelectronic devices. We present a new chemical etching process for nanoscale texturing of Si surfaces, which results in an almost complete suppression of the ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44dcedf4dfaccedf8bcadc7dc58b40c3
https://doi.org/10.1117/12.2199813
https://doi.org/10.1117/12.2199813
Publikováno v:
Journal of Applied Physics. 122:185302
In order to refine the layered structure of extreme ultraviolet multilayers, a multi-objective evolutionary algorithm which is post-hybridized with the standard Levenberg-Marquardt algorithm is applied to analyze the grazing incidence X-ray reflectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afd64e338b9039d540513b23f44ed7d
https://doi.org/10.1063/1.4995806
https://doi.org/10.1063/1.4995806
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