Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hai-Bei Huang"'
Publikováno v:
physica status solidi (b). 250:1352-1355
The internal transitions of Be acceptors confined in the center of GaAs/AlAs multiple quantum wells are investigated by Raman and photoluminescence (PL) spectra. A series of Be δ-doped GaAs/AlAs multiple quantum wells with doping at the well center
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f7fc2a8d2705cefab2c9e342837135f
https://doi.org/10.1002/pssb.201248293
https://doi.org/10.1002/pssb.201248293
Autor:
Xiang-Yan Meng, Su-Mei Li, Wei-Yan Cong, Wei-Min Zheng, Ying-Jie Wang, Xiaoyan Liu, Hai-Bei Huang, Jian-Bo Zhai
Publikováno v:
physica status solidi (b). 249:1585-1589
Ce-doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 °C in air ambient and a separate sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b876cab42af9184ce86c957672ea1b08
https://doi.org/10.1002/pssb.201147482
https://doi.org/10.1002/pssb.201147482
Publikováno v:
Acta Physica Sinica. 68:187104
The doping is one of important means in the semiconductor manufacturing techniques, by which the optical and electric properties of semiconductor materials can be significantly improved. The doping level and energy level structure of dopants have a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20ea2b998055aa747dbbd208f790031c
https://doi.org/10.7498/aps.68.20190254
https://doi.org/10.7498/aps.68.20190254
Publikováno v:
Chinese Physics B. 27:017302
Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ-doped with Be acceptors at the well center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3dc797a3b9b1c00cdb1e314c09cafb
https://doi.org/10.1088/1674-1056/27/1/017302
https://doi.org/10.1088/1674-1056/27/1/017302
Publikováno v:
Chinese Physics B. 25:047302
A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87397a31b2168651a0de74008d5e1518
https://doi.org/10.1088/1674-1056/25/4/047302
https://doi.org/10.1088/1674-1056/25/4/047302
Publikováno v:
Chinese Physics B; Jan2018, Vol. 27 Issue 1, p1-1, 1p
Publikováno v:
Chinese Physics B; Apr2016, Vol. 25 Issue 4, p1-1, 1p