Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hai Yuhan"'
Publikováno v:
Journal of Electronics (China). 16:81-87
The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained ch
Autor:
Hai Yuhan, Li Xingshi
Publikováno v:
Journal of Physics D: Applied Physics. 28:576-580
A kind of field-enhanced a-Si:H photoemitter with a sandwich structure of the form of SnO2-n--p a-Si:H-Ag:Cs:O, a low work function surface and an increased photoelectron yield due to the charge-intensifying effect has been designed. First experiment
Publikováno v:
Journal of Electronics (China). 11:164-169
Using the amorphous silicon (a-Si:H) film, which is cheap and has a small time lag, as the photoconductive layer of the liquid crystal light valve(LCLV) is an ideal selection. With the method of impedance matching used, we have designed and fabricate
Publikováno v:
Proceedings of SPIE; Nov1993, Issue 1, p490-495, 6p
Publikováno v:
Journal of Electronics; Jan1999, Vol. 16 Issue 1, p81-87, 7p
Publikováno v:
Journal of Electronics (China). 1:107-114
A series of curves of the photoconduction response under different field strengths and different degrees of illumination has been measured and investigated. It is found that the rise and decay curves are abnormal under weaker fields. Analysis of thes