Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hai Won Kim"'
Autor:
Hai-Won Kim, Shin Seung-Woo, Jeong Choon-Sik, Wooduck Jung, Hwang Han-Na, Ryong Hwang, Ilsub Chung, Park Seong-Jin, Sergey N. Zaretskiy
Publikováno v:
ECS Transactions. 53:321-329
We have researched low temperature silicon oxide (SiO2) with improved electrical properties and excellent film step-coverage. In-situ O2 plasma densification (DENSIFICATION) effect on SiO2 that has been deposited by PE-ALD at temperature (2 network d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faf75247093147642c9816e16a74e3c0
https://doi.org/10.1149/05301.0321ecst
https://doi.org/10.1149/05301.0321ecst
Publikováno v:
ECS Transactions. 25:173-178
Thin silicon dioxide films were obtained by low-temperature plasma oxidation. Plasma oxidation was performed using a specially-designed new plasma source, called dual rotated spiral antenna (DuRoSA) system. This new plasma source produced high densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc2dffc8ba99bf218ee6e4e83ee1d8af
https://doi.org/10.1149/1.3206617
https://doi.org/10.1149/1.3206617
Autor:
Sung Kil Cho, Hyung Su Choe, Dong Keun Lee, Pyung Yong Um, Hai Won Kim, Sang Ho Woo, Chang-Koo Kim, Yil Wook Kim
Publikováno v:
ECS Transactions. 11:601-606
Polysilicon (poly-Si) is mainly used as gate material for metal-oxide-semiconductor (MOS) based devices. As the dimensions of the MOS based devices keep shrinking, their performance depends critically on the film properties such as surface morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be8080e55ae097012085a3057a964701
https://doi.org/10.1149/1.2779594
https://doi.org/10.1149/1.2779594
Autor:
Ryong Hwang, Hai-Won Kim, Jeong Choon-Sik, Hwang Han-Na, Wooduck Jung, Kim Seok-Yun, Shin Seung-Woo, Ilsub Chung
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:01A146
Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO2) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical nand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8bc034661e6a3e51f7c97923fd2565
https://doi.org/10.1116/1.4904147
https://doi.org/10.1116/1.4904147
Publikováno v:
ECS Meeting Abstracts. :2120-2120
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3504bd7ed71bea6a166b03c9fd57f051
https://doi.org/10.1149/ma2009-02/25/2120
https://doi.org/10.1149/ma2009-02/25/2120
Publikováno v:
ECS Meeting Abstracts. :2141-2141
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c61130fa42acfae8656904ab4f831e4
https://doi.org/10.1149/ma2009-02/25/2141
https://doi.org/10.1149/ma2009-02/25/2141
Autor:
Ho Jin Cho, Young Dae Kim, Dong Su Park, Euna Lee, Cheol Hwan Park, Jun Soo Jang, Keum Bum Lee, Hai Won Kim, Soo Jin Chae, Young Jong Ki, Il Keun Han, Yong Wook Song
Publikováno v:
2006 European Solid-State Device Research Conference; 2006, p146-149, 4p