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Akademický článek

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Autor: Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu

Publikováno v: Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)

Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la

Externí odkaz: https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376

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Akademický článek

Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar

Autor: Ze-Sheng Chen, Ben Ma, Xiang-Jun Shang, Hai-Qiao Ni, Jin-Liang Wang, Zhi-Chuan Niu

Publikováno v: Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)

Abstract A pronounced high count rate of single-photon emission at the wavelength of 1.3 μm that is capable of fiber-based quantum communication from InAs/GaAs bilayer quantum dots coupled with a micropillar (diameter ~3 μm) cavity of distributed B

Externí odkaz: https://doaj.org/article/b57dd394e11843e3a57c856e0cc07d0e

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High-Temperature Continuous-Wave Operation of 1310 nm InAs/GaAs Quantum Dot Lasers

Autor: Xiang-Bin Su, Fu-Hui Shao, Hui-Ming Hao, Liu-Han Qing, Shu-Lun Li, De-Yan Dai, Xiang-Jun Shang, Tian-Fang Wang, null Yu-Zhang, Cheng-Ao Yang, Ying-Qiang Xu, Hai-Qiao Ni, Ying Ding, Niu Zhi-Chuan

Publikováno v: Chinese Physics B.

Here we report the 1.3-μm electrical injection lasers based on the InAs/GaAs quantum dot (QD) grown on GaAs substrate, which can steadily work at 110℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow gro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67d140b577e19019b18aac1dc8154a9a
https://doi.org/10.1088/1674-1056/acb491

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Akademický článek

Experimental Test of the State Estimation-Reversal Tradeoff Relation in General Quantum Measurements

Autor: Geng Chen, Yang Zou, Xiao-Ye Xu, Jian-Shun Tang, Yu-Long Li, Jin-Shi Xu, Yong-Jian Han, Chuan-Feng Li, Guang-Can Guo, Hai-Qiao Ni, Ying Yu, Mi-Feng Li, Guo-Wei Zha, Zhi-Chuan Niu, Yaron Kedem

Publikováno v: Physical Review X, Vol 4, Iss 2, p 021043 (2014)

When a measurement has limited strength, only partial information, regarding the initial state, is extracted, and, correspondingly, there is a probability to reverse its effect on the system and retrieve the original state. Recently, a clear and dire

Externí odkaz: https://doaj.org/article/2d3ca475a56345e190b93a6ea7e62d21

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Anomalous circular photogalvanic effect in p-GaAs

Autor: Xiao lin Zeng, Hui ming Hao, Yang Zhang, Shen bo Zhu, Jing Wu, Yonghai Chen, Hai qiao Ni, Zhi chuan Niu, Yu Liu

Publikováno v: Optics Express. 29:13829

The anomalous circular photogalvanic effect (ACPGE) is observed in p-GaAs with a thickness of 2 μm at room temperature, in which circularly polarized light is used to inject spin-polarized carriers and the spin diffusion can generate a macroscopic d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e1dcb30e4e0142d57f521673b55d521
https://doi.org/10.1364/oe.423121

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Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: The role of nanofabrication

Autor: Jin Dong Song, Hai Qiao Ni, Varun B. Verma, Kartik Srinivasan, Zhi Chuan Niu, Sae Woo Nam, Kumarasiri Konthasinghe, Ze Sheng Chen, Richard P. Mirin, John Lawall, Vikas Anant, Jin Liu, Marcelo Davanco, Ben Ma

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::565dda223255f57f3bd69871fbf3b366
https://europepmc.org/articles/PMC6459412/