Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Hai Dang Trinh"'
Autor:
Sayeef Salahuddin, Edward Yi Chang, C. Hu, Yueh Chin Lin, Yuen Yee Wong, Huy Binh Do, Hai Dang Trinh, Hong Quan Nguyen, Quang Ho Luc
Publikováno v:
IEEE Transactions on Electron Devices. 61:2774-2778
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al 2 O 3 /In 0.53 Ga 0.47 As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, includ
Autor:
Min Chieh Yang, Sheng Hung Tu, Edward Yi Chang, Sheng Ping Wang, Hsing Chen Wu, Ke Hung Chen, Hai Dang Trinh, Yueh Chin Lin, Huy Binh Do, Yuen Yee Wong, Quang Ho Luc, Yi Hsien Liao
Publikováno v:
ECS Solid State Letters. 3:N27-N31
The downscaling of complementary metal-oxide-semiconductor (CMOS)mayneedtheintegrationofIII-Vsemiconductorsandrelated high-k materials, since Si-based devices have reached their physical limitations. Unfortunately, the inherent poor interfacial quali
Publikováno v:
ECS Transactions. 60:1075-1079
Plasma enhanced atomic layer deposition (PEALD) aluminum nitride (AlN) is attracting great interests as an advanced technique for high-k/III-V interfacial passivation. In this study, we demonstrate the effects of PEALD-AlN layer deposition plasma pow
Autor:
Joseph Tsai, Edward Yi Chang, Chih Chieh Yu, Yuen Yee Wong, Hai Dang Trinh, Chia-Yuan Chang, Chien I. Kuo, Hui Cheng Chang, Hong Quan Nguyen, Yueh Chin Lin, Han Chin Chiu, Chi Ming Chen, David Hwang, Jyun Yi Wu, Terrence Yu
Publikováno v:
Journal of Electronic Materials. 42:2439-2444
The electrical properties of Al2O3/n-InGaAs metal–oxide–semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance–voltage (C–V) frequency dispersion in accumulation (1
Autor:
Quang Ho Luc, Ching-Ting Lee, S.P. Wang, Yueh Chin Lin, Hong Quan Nguyen, Carlos H. Diaz, Edward Yi Chang, Yu Sheng Chiu, Simon M. Jang, Chun-Hsiung Lin, Hai Dang Trinh, Hui-Chen Chang
Publikováno v:
IEEE Transactions on Electron Devices. 60:1555-1560
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum
Autor:
Chen Chen Chung, Kung Liang Lin, Hong Quan Nguyen, Man Chi Huang, Tieng Tung Luong, Tran Binh Tinh, Quang Ho Luc, Hai Dang Trinh, Hung Wei Yu, Chi Lang Nguyen, Edward Chang Yi
Publikováno v:
ECS Transactions. 50:461-467
We present the effect of mult iple A lN buffer layers on characterizations of GaN film quality, which includes a thin high-low-h igh-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers
Autor:
H. W. Yu, Edward Yi Chang, Ching-Ting Lee, C. L. Nguyen, S. Y. Wang, Hai Dang Trinh, C. H. Hsu, Hong Quan Nguyen
Publikováno v:
IEEE Transactions on Electron Devices. 60:235-240
We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with
Publikováno v:
MRS Proceedings. 1538:291-302
III-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality hig
Autor:
Edward Yi Chang, Mantu K. Hudait, Yung Hsuan Su, Chien I. Kuo, Ching Yi Hsu, Hong Quan Nguyen, Shih Hsuan Tang, Guang-Li Luo, Hai Dang Trinh
Publikováno v:
Microelectronic Engineering. 97:16-19
Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electric
Autor:
Chen Chen Chung, Chi Lang Nguyen, Kartika Chandra Sahoo, Edward Yi Chang, Ching-Ting Lee, Binh Tinh Tran, Hai Dang Trinh, Tien Tung Luong, Kung Liang Lin, Man Chi Huang, Hung Wei Yu
Publikováno v:
Solar Energy Materials and Solar Cells. 102:208-211
Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-t