Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography.

Autor: Hagedorn, M. S., Litfin, D. D., Price, G. M., Gordon, A. E., Higman, T. K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 6, p4153-4156, 4p

Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal-insulator-semiconductor field-effect transistors.

Autor: Fayfield, R. T., Chen, J., Hagedorn, M. S., Higman, T. K., Moy, A. M., Cheng, K. Y.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1995, Vol. 13 Issue 2, p786-788, 3p

Real-space transfer by hot electron resonant tunneling

Autor: Higman, T. K., Chen, Jihong, Hagedorn, M. S., Williamson, F.

Publikováno v: Superlattices and Microstructures; June 1993, Vol. 13 Issue: 4 p397-397, 1p