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pro vyhledávání: '"Hage, Ralph El"'
Autor:
Chen, Tian-Yue, Ren, Haowen, Ghazikhanian, Nareg, Hage, Ralph El, Sasaki, Dayne Y., Salev, Pavel, Takamura, Yayoi, Schuller, Ivan K., Kent, Andrew D.
Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in s
Externí odkaz:
http://arxiv.org/abs/2406.11679
Autor:
Hage, Ralph El, Humbert, Vincent, Rouco, Victor, Sander, Anke, Charliac, Jérôme, Mesoraca, Salvatore, Trastoy, Juan, Briatico, Javier, Santamaría, Jacobo, Villegas, Javier E.
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical stimuli, to
Externí odkaz:
http://arxiv.org/abs/2204.09255
Akademický článek
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Autor:
Liao, Zhaoliang, Gauquelin, Nicolas, Green, Robert J., Müller-Caspary, Knut, Lobato, Ivan, Li, Lin, Van Aert, Sandra, Verbeeck, Johan, Huijben, Mark, Grisolia, Mathieu N., Rouco, Victor, Hage, Ralph El, Villegas, Javier E., Mercy, Alain, Bibes, Manuel, Ghosez, Philippe, Sawatzky, George A., Rijnders, Guus, Koster, Gertjan
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2018 Sep . 115(38), 9515-9520.
Externí odkaz:
https://www.jstor.org/stable/26531145
Autor:
Feng, Mingzhen, Li, Junjie, Zhang, Shenli, Pofelski, Alexandre, Hage, Ralph El, Klewe, Christoph, N’diaye, Alpha T., Shafer, Padraic, Zhu, Yimei, Galli, Giulia, Schuller, Ivan K., Takamura, Yayoi
Publikováno v:
The Journal of Physical Chemistry - Part C; 20240101, Issue: Preprints