Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hafniumdioxid"'
Autor:
Mittmann, Terence
Die Digitalisierung ist in vollem Gange. Viele Geräte werden intelligent, das heißt sie bekommen ein eigenes Rechenwerk und werden mit permanentem Internetzugang ausgestattet. Da viele dieser neuen intelligenten Geräte möglichst mobil sein sollen
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A91849
https://tud.qucosa.de/api/qucosa%3A91849/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A91849/attachment/ATT-0/
Autor:
Blaschke, Daniel
Im Fokus der vorliegenden Arbeit liegt das Widerstandsschalten von HfO2- und TiO2-Dünnschichten, wobei insbesondere auf den Einfluss der Kristallstruktur, der Stöchiometrie und der Elektrodenmaterialien ((inert, Pt) und (reaktiv, Ti/Pt)) eingegange
Autor:
Künneth, Christopher
The material system Hf1-xZrxO2 (0 < x < 1), which is well-known in the semiconductor industry for its excellent linear dielectric characteristics, was investigated and optimized regarding its ferroelectric and pyroelectric characteristics. The densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______518::29cf589318b731d5ecd81d9d4d0f6e48
https://mediatum.ub.tum.de/1440300
https://mediatum.ub.tum.de/1440300
Autor:
Jachalke, Sven
The change of the spontaneous polarization due to a change of temperature is known as the pyroelectric effect and is restricted to crystalline, non-centrosymmetric and polar matter. Its main application is the utilization in infrared radiation sensor
Externí odkaz:
https://tubaf.qucosa.de/id/qucosa%3A33969
https://tubaf.qucosa.de/api/qucosa%3A33969/attachment/ATT-0/
https://tubaf.qucosa.de/api/qucosa%3A33969/attachment/ATT-0/
Autor:
Yurchuk, Ekaterina
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films inst
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A28793
https://tud.qucosa.de/api/qucosa%3A28793/attachment/ATT-1/
https://tud.qucosa.de/api/qucosa%3A28793/attachment/ATT-1/
Autor:
Yurchuk, Ekaterina
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films inst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4179::0d0b0c62c3b42b9fa710218fe0bdfefd
https://tud.qucosa.de/id/qucosa:28793
https://tud.qucosa.de/id/qucosa:28793
Autor:
Liu, Milias
Publikováno v:
Aachen : Publikationsserver der RWTH Aachen University 157 S. : graph. Darst. (2014). = Aachen, Techn. Hochsch., Diss., 2014
In this work amorphous hafnium oxide thin films with varying oxygen deficiency were prepared at room temperature by means of Pulsed Laser Deposition (PLD) and direct-current Magnetron Sputtering (dcMS). Films deposited by PLD were created from a crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______791::a9c7983314e9581821bf50cc358ee414
https://publications.rwth-aachen.de/record/445002
https://publications.rwth-aachen.de/record/445002
Autor:
Forsgren, Katarina
Diss. (sammanfattning) Uppsala : Univ., 2001.
Härtill 8 uppsatser.
Härtill 8 uppsatser.
Externí odkaz:
http://publications.uu.se/theses/91-554-5143-8/