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Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

Autor: Zhou, Jie, Vincent, Daniel, Acharya, Sudip, Ojo, Solomon, Abrand, Alireza, Liu, Yang, Gong, Jiarui, Liu, Dong, Haessly, Samuel, Shen, Jianping, Xu, Shining, Li, Yiran, Lu, Yi, Stanchu, Hryhorii, Mawst, Luke, Claflin, Bruce, Mohseni, Parsian K., Ma, Zhenqiang, Yu, Shui-Qing

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventiona

Externí odkaz: http://arxiv.org/abs/2409.09752

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Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy

Autor: Liu, Yang, Gong, Jiarui, Acharya, Sudip, Lia, Yiran, Abrand, Alireza, Rudie, Justin M., Zhou, Jie, Lu, Yi, Abbasi, Haris Naeem, Vincent, Daniel, Haessly, Samuel, Tsai, Tsung-Han, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement and is insufficient for room temperature lasin

Externí odkaz: http://arxiv.org/abs/2408.16884

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AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$

Autor: Liu, Yang, Li, Yiran, Acharya, Sudip, Zhou, Jie, Gong, Jiarui, Abrand, Alireza, Lu, Yi, Vincent, Daniel, Haessly, Samuel, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang

This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra

Externí odkaz: http://arxiv.org/abs/2408.08451

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